PA

Phaedon Avouris

IBM: 62 patents #1,257 of 70,183Top 2%
KT Karlsruher Institut Für Technologie: 3 patents #20 of 428Top 5%
KT Karlsruhe Institute Of Technology: 2 patents #5 of 59Top 9%
CL Cambridge Enterprise Limited: 1 patents #260 of 688Top 40%
Globalfoundries: 1 patents #2,221 of 4,424Top 55%
📍 Yorktown Heights, NY: #52 of 858 inventorsTop 7%
🗺 New York: #1,271 of 115,490 inventorsTop 2%
Overall (All Time): #35,900 of 4,157,543Top 1%
63
Patents All Time

Issued Patents All Time

Showing 26–50 of 63 patents

Patent #TitleCo-InventorsDate
8803130 Graphene transistors with self-aligned gates Ali Afzali-Ardakani, Damon B. Farmer, Yu-Ming Lin, Yu Zhu 2014-08-12
8805148 Generation of terahertz electromagnetic waves in graphene by coherent photon-mixing Chun-Yung Sung, Alberto Valdes Garcia, Fengnian Xia 2014-08-12
8753965 Graphene transistor with a self-aligned gate Damon B. Farmer, Yu-Ming Lin, Yu Zhu 2014-06-17
8748871 Graphene devices and semiconductor field effect transistors in 3D hybrid integrated circuits Josephine B. Chang, Wilfried E. Haensch, Fei Liu, Zihong Liu, Yanqing Wu +1 more 2014-06-10
8698165 Graphene channel-based devices and methods for fabrication thereof Kuan-Neng Chen, Damon B. Farmer, Yu-Ming Lin 2014-04-15
8680512 Graphene transistor with a self-aligned gate Damon B. Farmer, Yu-Ming Lin, Yu Zhu 2014-03-25
8637374 Method of fabricating self-aligned nanotube field effect transistor Joerg Appenzeller, Kevin K. Chan, Philip G. Collins, Richard Martel, Hon-Sum Philip Wong 2014-01-28
8629010 Carbon nanotube transistor employing embedded electrodes Yu-Ming Lin, Mathias B. Steiner, Michael Engel, Ralph Krupke 2014-01-14
8614435 Utilization of organic buffer layer to fabricate high performance carbon nanoelectronic devices Damon B. Farmer, Fengnian Xia 2013-12-24
8614141 Utilization of organic buffer layer to fabricate high performance carbon nanoelectronic devices Damon B. Farmer, Fengnian Xia 2013-12-24
8610989 Optoelectronic device employing a microcavity including a two-dimensional carbon lattice structure Mathias B. Steiner, Michael Engel, Ralph Krupke, Andrea Ferrari, Antonio Lombardo 2013-12-17
8610617 Graphene based structures and methods for broadband electromagnetic radiation absorption at the microwave and terahertz frequencies Alberto Valdes Garcia, Chun-Yung Sung, Fengnian Xia, Hugen Yan 2013-12-17
8530886 Nitride gate dielectric for graphene MOSFET Deborah A. Neumayer, Wenjuan Zhu 2013-09-10
8455297 Method to fabricate high performance carbon nanotube transistor integrated circuits by three-dimensional integration technology Kuan-Neng Chen, Yu-Ming Lin 2013-06-04
8445320 Graphene channel-based devices and methods for fabrication thereof Kuan-Neng Chen, Damon B. Farmer, Yu-Ming Lin 2013-05-21
8344358 Graphene transistor with a self-aligned gate Damon B. Farmer, Yu-Ming Lin, Yu Zhu 2013-01-01
8283453 Selective placement of carbon nanotubes through functionalization Ali Afzali-Ardakani, James B. Hannon, Christian Klinke 2012-10-09
8138491 Self-aligned nanotube field effect transistor Joerg Appenzeller, Kevin K. Chan, Philip G. Collins, Richard Martel, Hon-Sum Philip Wong 2012-03-20
8119466 Self-aligned process for nanotube/nanowire FETs Roy A. Carruthers, Jia Chen, Christopher G. M. M. Detavernier, Christian Lavoie, Hon-Sum Philip Wong 2012-02-21
8084012 Selective placement of carbon nanotubes through functionalization Alina Afzali-Ardakani, James B. Hannon, Christian Klinke 2011-12-27
8053782 Single and few-layer graphene based photodetecting devices Yu-Ming Lin, Thomas Mueller, Fengnian Xia 2011-11-08
8003453 Self-aligned process for nanotube/nanowire FETs Roy A. Carruthers, Jia Chen, Christopher G. M. M. Detavernier, Christian Lavoie, Hon-Sum Philip Wong 2011-08-23
7955931 Method and apparatus for fabricating a carbon nanotube transistor Joerg Appenzeller, Yu-Ming Lin 2011-06-07
7897960 Self-aligned nanotube field effect transistor Joerg Appenzeller, Kevin K. Chan, Philip G. Collins, Richard Martel, Hon-Sum Philip Wong 2011-03-01
7851783 Method and apparatus for fabricating a carbon nanotube transistor Joerg Appenzeller, Yu-Ming Lin 2010-12-14