MR

Martin Revitz

IBM: 11 patents #9,995 of 70,183Top 15%
Overall (All Time): #428,969 of 4,157,543Top 15%
12
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
5656514 Method for making heterojunction bipolar transistor with self-aligned retrograde emitter profile David C. Ahlgren, Jack O. Chu, Paul A. Ronsheim, Mary J. Saccamango, David Sunderland 1997-08-12
5385850 Method of forming a doped region in a semiconductor substrate utilizing a sacrificial epitaxial silicon layer Jack O. Chu, Chang-Ming Hsieh, Victor R. Nastasi, Paul A. Ronsheim 1995-01-31
5132765 Narrow base transistor and method of fabricating same Jeffrey L. Blouse, Inge G. Fulton, Russell C. Lange, Bernard S. Meyerson, Karen A. Nummy +1 more 1992-07-21
5008207 Method of fabricating a narrow base transistor Jeffrey L. Blouse, Inge G. Fulton, Russell C. Lange, Bernard S. Meyerson, Karen A. Nummy +1 more 1991-04-16
4701998 Method for fabricating a bipolar transistor David C. Ahlgren, Robert E. Bendernagel, Russell C. Lange 1987-10-27
4667395 Method for passivating an undercut in semiconductor device preparation David C. Ahlgren, William H. Ma 1987-05-26
4437108 Double polysilicon contact structure James R. Gardiner, Stanley R. Makarewicz, Joseph F. Shepard, Jr. 1984-03-13
4394406 Double polysilicon contact structure and process James R. Gardiner, Stanley R. Makarewicz, Joseph F. Shepard, Jr. 1983-07-19
4354309 Method of manufacturing a metal-insulator-semiconductor device utilizing a graded deposition of polycrystalline silicon James R. Gardiner, William A. Pliskin, Joseph F. Shepard, Jr. 1982-10-19
4341009 Method for making an electrical contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrate Robert F. Bartholomew, Paul L. Garbarino, James R. Gardiner, Joseph F. Shepard, Jr. 1982-07-27
4249968 Method of manufacturing a metal-insulator-semiconductor utilizing a multiple stage deposition of polycrystalline layers James R. Gardiner, William A. Pliskin, Joseph F. Shepard, Jr. 1981-02-10
4191603 Making semiconductor structure with improved phosphosilicate glass isolation Paul L. Garbarino, Joseph F. Shepard, Jr. 1980-03-04