Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5656514 | Method for making heterojunction bipolar transistor with self-aligned retrograde emitter profile | David C. Ahlgren, Jack O. Chu, Paul A. Ronsheim, Mary J. Saccamango, David Sunderland | 1997-08-12 |
| 5385850 | Method of forming a doped region in a semiconductor substrate utilizing a sacrificial epitaxial silicon layer | Jack O. Chu, Chang-Ming Hsieh, Victor R. Nastasi, Paul A. Ronsheim | 1995-01-31 |
| 5132765 | Narrow base transistor and method of fabricating same | Jeffrey L. Blouse, Inge G. Fulton, Russell C. Lange, Bernard S. Meyerson, Karen A. Nummy +1 more | 1992-07-21 |
| 5008207 | Method of fabricating a narrow base transistor | Jeffrey L. Blouse, Inge G. Fulton, Russell C. Lange, Bernard S. Meyerson, Karen A. Nummy +1 more | 1991-04-16 |
| 4701998 | Method for fabricating a bipolar transistor | David C. Ahlgren, Robert E. Bendernagel, Russell C. Lange | 1987-10-27 |
| 4667395 | Method for passivating an undercut in semiconductor device preparation | David C. Ahlgren, William H. Ma | 1987-05-26 |
| 4437108 | Double polysilicon contact structure | James R. Gardiner, Stanley R. Makarewicz, Joseph F. Shepard, Jr. | 1984-03-13 |
| 4394406 | Double polysilicon contact structure and process | James R. Gardiner, Stanley R. Makarewicz, Joseph F. Shepard, Jr. | 1983-07-19 |
| 4354309 | Method of manufacturing a metal-insulator-semiconductor device utilizing a graded deposition of polycrystalline silicon | James R. Gardiner, William A. Pliskin, Joseph F. Shepard, Jr. | 1982-10-19 |
| 4341009 | Method for making an electrical contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrate | Robert F. Bartholomew, Paul L. Garbarino, James R. Gardiner, Joseph F. Shepard, Jr. | 1982-07-27 |
| 4249968 | Method of manufacturing a metal-insulator-semiconductor utilizing a multiple stage deposition of polycrystalline layers | James R. Gardiner, William A. Pliskin, Joseph F. Shepard, Jr. | 1981-02-10 |
| 4191603 | Making semiconductor structure with improved phosphosilicate glass isolation | Paul L. Garbarino, Joseph F. Shepard, Jr. | 1980-03-04 |