Issued Patents All Time
Showing 301–325 of 384 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10170618 | Vertical transistor with reduced gate-induced-drain-leakage current | Kangguo Cheng, Xin Miao, Peng Xu | 2019-01-01 |
| 10170588 | Method of forming vertical transport fin field effect transistor with high-K dielectric feature uniformity | Tenko Yamashita, Chun Wing Yeung | 2019-01-01 |
| 10164055 | Vertical FET with selective atomic layer deposition gate | Kangguo Cheng, Xin Miao, Wenyu Xu | 2018-12-25 |
| 10153367 | Gate length controlled vertical FETs | Kangguo Cheng, Xin Miao, Wenyu Xu | 2018-12-11 |
| 10147635 | Different shallow trench isolation fill in fin and non-fin regions of finFET | Kangguo Cheng, Peng Xu | 2018-12-04 |
| 10141441 | Vertical transistor with back bias and reduced parasitic capacitance | Kangguo Cheng, Xin Miao, Peng Xu | 2018-11-27 |
| 10141434 | Complementary tunneling field effect transistor and manufacturing method therefor | Xichao Yang, Jing Zhao | 2018-11-27 |
| 10141234 | Flipped vertical field-effect-transistor | Kangguo Cheng, Xin Miao, Wenyu Xu | 2018-11-27 |
| 10141448 | Vertical FETs with different gate lengths and spacer thicknesses | Xin Miao, Kangguo Cheng, Wenyu Xu | 2018-11-27 |
| 10134874 | Vertical field effect transistors with bottom source/drain epitaxy | Kangguo Cheng, Xin Miao, Wenyu Xu | 2018-11-20 |
| 10134866 | Field effect transistor air-gap spacers with an etch-stop layer | Kangguo Cheng, Xin Miao, Wenyu Xu | 2018-11-20 |
| 10111022 | Processing object-based audio signals | Alan J. Seefeldt, Lie Lu | 2018-10-23 |
| 10109491 | Vertical FET with selective atomic layer deposition gate | Kangguo Cheng, Xin Miao, Wenyu Xu | 2018-10-23 |
| 10103246 | Fabrication of a vertical fin field effect transistor (vertical finFET) with a self-aligned gate and fin edges | Kangguo Cheng, Xin Miao, Wenyu Xu | 2018-10-16 |
| 10097838 | System and method for depth map coding for smooth depth map area | Jianhua Zheng, Zhouye Gu, Nam Ling | 2018-10-09 |
| 10090412 | Vertical transistor with back bias and reduced parasitic capacitance | Kangguo Cheng, Xin Miao, Peng Xu | 2018-10-02 |
| 10090410 | Forming a combination of long channel devices and vertical transport fin field effect transistors on the same substrate | Cheng Chi, Tenko Yamashita | 2018-10-02 |
| 10085028 | Method and device for reducing a computational load in high efficiency video coding | Zhouye Gu, Jianhua Zheng, Nam Ling | 2018-09-25 |
| 10083871 | Fabrication of a vertical transistor with self-aligned bottom source/drain | Kangguo Cheng, Xin Miao, Wenyu Xu | 2018-09-25 |
| 10074652 | Vertical FET with reduced parasitic capacitance | Kangguo Cheng, Xin Miao, Philip J. Oldiges, Wenyu Xu | 2018-09-11 |
| 10068807 | Uniform shallow trench isolation | Kangguo Cheng, Junli Wang, Peng Xu | 2018-09-04 |
| 10068799 | Self-aligned contact | Kangguo Cheng, Xin Miao, Wenyu Xu | 2018-09-04 |
| 10057586 | Method and device for providing depth based block partitioning in high efficiency video coding | Zhouye Gu, Jianhua Zheng, Nam Ling | 2018-08-21 |
| 10032867 | Forming bottom isolation layer for nanosheet technology | Chun Wing Yeung | 2018-07-24 |
| 10032676 | Vertical field effect transistor having U-shaped top spacer | Kangguo Cheng, Xin Miao, Wenyu Xu | 2018-07-24 |