Issued Patents All Time
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9076774 | Semiconductor device and a method of manufacturing same | Michiaki Hiyoshi | 2015-07-07 |
| 7906848 | Semiconductor device | Hiroyuki Ohta, Naotaka Tanaka, Masahiko Fujisawa, Akihiko Ohsaki | 2011-03-15 |
| 7244643 | Semiconductor device and manufacturing method thereof | Norio Ishitsuka, Hideo Miura, Shuji Ikeda, Toshifumi Takeda, Hiroyuki Ohta | 2007-07-17 |
| 7205617 | Semiconductor device including active regions and gate electrodes for field effect transistors, with a trench formed between the active regions | Hiroyuki Ohta, Yasuo Sonobe, Kousuke Ishibashi, Yasushi Tainaka, Masafumi Miyamoto +1 more | 2007-04-17 |
| 7196395 | Semiconductor device and manufacturing method | Hideo Miura, Hiroyuki Ohta, Michihiro Mishima, Katsuyuki Nakanishi | 2007-03-27 |
| 7193270 | Semiconductor device with a vertical transistor | Hiroyuki Ohta, Masahiro Moniwa, Shingo Nasu | 2007-03-20 |
| 7109568 | Semiconductor device including n-channel fets and p-channel fets with improved drain current characteristics | Hiroyuki Ohta, Shingo Nasu | 2006-09-19 |
| 7009279 | Semiconductor device configured for suppressed germanium diffusion from a germanium-doped regions and a method for fabrication thereof | Shingo Nasu, Tomio Iwasaki, Hiroyuki Ohta, Shuji Ikeda | 2006-03-07 |
| 6982465 | Semiconductor device with CMOS-field-effect transistors having improved drain current characteristics | Hiroyuki Ohta, Fumio Ootsuka, Shuji Ikeda, Takahiro Onai, Hideo Miura +2 more | 2006-01-03 |
| 6965140 | Semiconductor device including storage capacitor | Hideo Miura, Hiroyuki Ohta, Tomio Iwasaki, Isamu Asano | 2005-11-15 |
| 6891761 | Semiconductor device and manufacturing method | Hideo Miura, Hiroyuki Ohta, Michihiro Mishima, Katsuyuki Nakanishi | 2005-05-10 |
| 6720603 | CAPACITOR STRUCTURE AND A SEMICONDUCTOR DEVICE WITH A FIRST METAL LAYER, A SECOND METAL SILICIDE LAYER FORMED OVER THE FIRST METAL LAYER AND A SECOND METAL LAYER FORMED OVER THE SECOND METAL SILICIDE LAYER | Shinpei Iijima, Yuzuru Ohji, Masato Kunitomo, Masahiko Hiratani, Yuichi Matsui +1 more | 2004-04-13 |
| 6639263 | Semiconductor device with copper wiring connected to storage capacitor | Hideo Miura, Hiroyuki Ohta, Tomio Iwasaki, Isamu Asano | 2003-10-28 |
| 6534375 | METHOD OF FORMING A CAPACITOR IN A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING A METAL SILICON NITRIDE LAYER TO PROTECT AN UNDERLYING METAL SILICIDE LAYER FROM OXIDATION DURING SUBSEQUENT PROCESSING STEPS | Shinpei Iijima, Yuzuru Ohji, Masato Kunitomo, Masahiko Hiratani, Yuichi Matsui +1 more | 2003-03-18 |
| 6521932 | Semiconductor device with copper wiring connected to storage capacitor | Hideo Miura, Hiroyuki Ohta, Tomio Iwasaki, Isamu Asano | 2003-02-18 |