Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8436333 | Silicon light emitting diode, silicon optical transistor, silicon laser and its manufacturing method | Shinichi Saito, Digh Hisamoto, Tadashi Arai | 2013-05-07 |
| 7405588 | Device and data processing method employing the device | Takayuki Kawahara, Masayuki Miyazaki, Yasushi Goto, Natsuki Yokoyama | 2008-07-29 |
| 7042055 | Semiconductor device and manufacturing thereof | Shinichi Saito, Kazuyoshi Torii, Toshiyuki Mine | 2006-05-09 |
| 7042051 | Semiconductor device including impurity layer having a plurality of impurity peaks formed beneath the channel region | Fumio Ootsuka, Kazuhiro Ohnishi, Shoji Wakahara | 2006-05-09 |
| 7029988 | Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium | Kazuhiro Ohnishi, Nobuyuki Sugii | 2006-04-18 |
| 6982465 | Semiconductor device with CMOS-field-effect transistors having improved drain current characteristics | Yukihiro Kumagai, Hiroyuki Ohta, Fumio Ootsuka, Shuji Ikeda, Hideo Miura +2 more | 2006-01-03 |
| 6878606 | Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium | Kazuhiro Ohnishi, Nobuyuki Sugii | 2005-04-12 |
| 6667199 | Semiconductor device having a replacement gate type field effect transistor and its manufacturing method | Kazuyoshi Torii, Ryuta Tsuchiya, Masatada Horiuchi | 2003-12-23 |
| 6524903 | Method of manufacturing a semiconductor device having two peaks in an impurity concentration distribution | Fumio Ootsuka, Kazuhiro Ohnishi, Shoji Wakahara | 2003-02-25 |
| 6313012 | Method of fabricating multi-layered structure having single crystalline semiconductor film formed on insulator | Masatada Horiuchi, Katsuyoshi Washio | 2001-11-06 |
| 6004865 | Method of fabricating multi-layered structure having single crystalline semiconductor film formed on insulator | Masatada Horiuchi, Katsuyoshi Washio | 1999-12-21 |
| 5962880 | Heterojunction bipolar transistor | Katsuya Oda, Eiji Ohue, Katsuyoshi Washio | 1999-10-05 |
| 5598015 | Hetero-junction bipolar transistor and semiconductor devices using the same | Tomonori Tanoue, Hiroshi Masuda, Tohru Nakamura, Katsuyoshi Washio | 1997-01-28 |
| 5523602 | Multi-layered structure having single crystalline semiconductor film formed on insulator | Masatada Horiuchi, Katsuyoshi Washio | 1996-06-04 |
| 5430317 | Semiconductor device | Katsuyoshi Washio, Tohru Nakamura | 1995-07-04 |
| 5424575 | Semiconductor device for SOI structure having lead conductor suitable for fine patterning | Katsuyoshi Washio, Tohru Nakamura, Masatada Horiuchi, Takashi Uchino | 1995-06-13 |
| 5387545 | Impurity diffusion method | Yukihiro Kiyota, Tohru Nakamura, Taroh INADA | 1995-02-07 |
| 5324983 | Semiconductor device | Takeo Shiba, Tohru Nakamura, Yoichi Tamaki, Katsuyoshi Washio, Kazuhiro Ohnishi +1 more | 1994-06-28 |
| 5177584 | Semiconductor integrated circuit device having bipolar memory, and method of manufacturing the same | Akihisa Uchida, Yuji Yatsuda, Katsumi Ogiue, Kazuo Nakazato | 1993-01-05 |
| 5109263 | Semiconductor device with optimal distance between emitter and trench isolation | Mitsuo Nanba, Tohru Nakamura, Kazuo Nakazato, Takeo Shiba, Katsuyoshi Washio +2 more | 1992-04-28 |
| 4926235 | Semiconductor device | Yoichi Tamaki, Tokuo Kure, Tohru Nakamura, Tetsuya Hayashida, Kiyoji Ikeda +3 more | 1990-05-15 |