Issued Patents All Time
Showing 1–25 of 28 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7001818 | MIS semiconductor device and manufacturing method thereof | Ryuta Tsuchiya | 2006-02-21 |
| 6987983 | Radio frequency monolithic integrated circuit and method for manufacturing the same | Masao Kondo, Katsuyoshi Washio | 2006-01-17 |
| 6800513 | Manufacturing semiconductor device including forming a buried gate covered by an insulative film and a channel layer | Takashi Takahama | 2004-10-05 |
| 6781202 | Semiconductor devices and their fabrication methods | Ken Yamaguchi, Yoshiaki Takemura, Kenichi Osada, Takashi Uchino | 2004-08-24 |
| 6744099 | MIS semiconductor device and manufacturing method thereof | Ryuta Tsuchiya | 2004-06-01 |
| 6730964 | Semiconductor device and method of producing the same | — | 2004-05-04 |
| 6690060 | Field effect transistor and method of fabricating the same by controlling distribution condition of impurity region with implantation of additional ion | Takashi Takahama | 2004-02-10 |
| 6667199 | Semiconductor device having a replacement gate type field effect transistor and its manufacturing method | Kazuyoshi Torii, Ryuta Tsuchiya, Takahiro Onai | 2003-12-23 |
| 6646296 | Semiconductor integrated circuit and method for manufacturing the same | — | 2003-11-11 |
| 6538268 | Semiconductor device and method of producing the same | — | 2003-03-25 |
| 6462364 | Semiconductor integrated circuit and method for manufacturing the same | — | 2002-10-08 |
| 6329238 | Method of fabricating a memory device having a long data retention time with the increase in leakage current suppressed | Ken Yamaguchi, Shinichiro Kimura, Tatsuya Teshima | 2001-12-11 |
| 6313012 | Method of fabricating multi-layered structure having single crystalline semiconductor film formed on insulator | Takahiro Onai, Katsuyoshi Washio | 2001-11-06 |
| 6157055 | Semiconductor memory device having a long data retention time with the increase in leakage current suppressed | Ken Yamaguchi, Shinichiro Kimura, Tatsuya Teshima | 2000-12-05 |
| 6004865 | Method of fabricating multi-layered structure having single crystalline semiconductor film formed on insulator | Takahiro Onai, Katsuyoshi Washio | 1999-12-21 |
| 5523602 | Multi-layered structure having single crystalline semiconductor film formed on insulator | Takahiro Onai, Katsuyoshi Washio | 1996-06-04 |
| 5424575 | Semiconductor device for SOI structure having lead conductor suitable for fine patterning | Katsuyoshi Washio, Tohru Nakamura, Takahiro Onai, Takashi Uchino | 1995-06-13 |
| 5391912 | Semiconductor device having polycrystalline silicon region forming a lead-out electrode region and extended beneath active region of transistor | Kazuo Nakazato | 1995-02-21 |
| 5227660 | Semiconductor device | Kazuo Nakazato | 1993-07-13 |
| 5109263 | Semiconductor device with optimal distance between emitter and trench isolation | Mitsuo Nanba, Tohru Nakamura, Kazuo Nakazato, Takeo Shiba, Katsuyoshi Washio +2 more | 1992-04-28 |
| 4949151 | Bipolar transistor having side wall base and collector contacts | Katsuyoshi Washio, Tohru Nakamura | 1990-08-14 |
| 4887145 | Semiconductor device in which electrodes are formed in a self-aligned manner | Katsuyoshi Washio, Tohru Nakamura, Kazuo Nakazato, Tetsuya Hayashida | 1989-12-12 |
| 4769686 | Semiconductor device | Ken Yamaguchi | 1988-09-06 |
| 4668970 | Semiconductor device | Yuji Yatsuda, Takaaki Hagiwara, Shinichi Minami, Toru Kaga | 1987-05-26 |
| 4633438 | Stacked semiconductor memory | Hitoshi Kume, Takaaki Hagiwara, Toru Kaga, Yasuo Igura, Akihiro Shimizu | 1986-12-30 |