Issued Patents All Time
Showing 26–50 of 55 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9502581 | Non-volatile floating gate memory cells | — | 2016-11-22 |
| 9142306 | Selecting memory cells using source lines | Tsung-Ching Wu, Steven J. Schumann, Philip Ng | 2015-09-22 |
| 7974136 | Method for erasing a flash memory cell or an array of such cells having improved erase coupling ratio | Ben Sheen, Jonathan Pabustan, Der-Tsyr Fan, Yaw Wen Hu, Prateep Tuntasood | 2011-07-05 |
| 7964933 | Integrated circuit including power diode | Paul Chang, Prognyan Ghosh, Wayne Y. W. Hsueh, Vladimir Rodov | 2011-06-21 |
| 7701248 | Storage element for controlling a logic circuit, and a logic device having an array of such storage elements | Kai Man Yue, Bomy Chen, Tsung-Lu Syu | 2010-04-20 |
| 7668013 | Method for erasing a flash memory cell or an array of such cells having improved erase coupling ratio | Ben Sheen, Jonathan Pabustan, Prateep Tuntasood, Der-Tsyr Fan, Yaw Wen Hu | 2010-02-23 |
| 7250668 | Integrated circuit including power diode | Paul Chang, Prognyan Ghosh, Wayne Y. W. Hsueh, Vladimir Rodov | 2007-07-31 |
| 7084453 | Method of forming different oxide thickness for high voltage transistor and memory cell tunnel dielectric | Amitay Levi, Dana Lee | 2006-08-01 |
| 7008846 | Non-volatile floating gate memory cell with floating gates formed as spacers, and an array thereof, and a method of manufacturing | — | 2006-03-07 |
| 6979861 | Power device having reduced reverse bias leakage current | Vladimir Rodov, Paul Chang, Gary M. Hurtz, Jianren Bao | 2005-12-27 |
| 6967372 | Semiconductor memory array of floating gate memory cells with vertical control gate sidewalls and insulation spacers | — | 2005-11-22 |
| 6765264 | Method of fabricating power rectifier device to vary operating parameters and resulting device | Paul Chang, Wayne Y. W. Hsueh, Vladimir Rodov, Charles W. C. Lin | 2004-07-20 |
| 6750090 | Self aligned method of forming a semiconductor memory array of floating gate memory cells with floating gates having multiple sharp edges, and a memory array made thereby | — | 2004-06-15 |
| 6743703 | Power diode having improved on resistance and breakdown voltage | Vladimir Rodov, Paul Chang, Jianren Bao, Wayne Y. W. Hsueh, Arthur Chiang | 2004-06-01 |
| 6706592 | Self aligned method of forming a semiconductor array of non-volatile memory cells | Chien-Sheng Su | 2004-03-16 |
| 6624030 | Method of fabricating power rectifier device having a laterally graded P-N junction for a channel region | Paul Chang, Wayne Y. W. Hsueh, Vladimir Rodov, Charles W. C. Lin | 2003-09-23 |
| 6563167 | Semiconductor memory array of floating gate memory cells with floating gates having multiple sharp edges | — | 2003-05-13 |
| 6537860 | Method of fabricating power VLSI diode devices | Hidenori Akiyama, Paul Chang, Wayne Y. W. Hsueh, Haru Ohkawa, Yasuo Ohtsuki +1 more | 2003-03-25 |
| 6515330 | Power device having vertical current path with enhanced pinch-off for current limiting | Gary M. Hurtz, Vladimir Rodov, Paul Chang, Ching-Lang Chiang | 2003-02-04 |
| 6498367 | Discrete integrated circuit rectifier device | Paul Chang, Wayne Y. W. Hsueh, Vladimir Rodov | 2002-12-24 |
| 6448160 | Method of fabricating power rectifier device to vary operating parameters and resulting device | Paul Chang, Wayne Y. W. Hsueh, Vladimir Rodov | 2002-09-10 |
| 6426541 | Schottky diode having increased forward current with improved reverse bias characteristics and method of fabrication | Paul Chang, Wayne Y. W. Hsueh, Vladimir Rodov | 2002-07-30 |
| 6420225 | Method of fabricating power rectifier device | Paul Chang, Vladimir Rodov, Charles W. C. Lin, Ching-Lang Chiang | 2002-07-16 |
| 6404033 | Schottky diode having increased active surface area with improved reverse bias characteristics and method of fabrication | Paul Chang, Wayne Y. W. Hsueh, Vladimir Rodov | 2002-06-11 |
| 6399996 | Schottky diode having increased active surface area and method of fabrication | Paul Chang, Wayne Y. W. Hsueh, Vladimir Rodov | 2002-06-04 |