Issued Patents All Time
Showing 25 most recent of 63 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12069964 | Three dimensional perpendicular magnetic tunnel junction with thin film transistor array | Kuk-Hwan Kim, Dafna Beery, Andrew J. Walker | 2024-08-20 |
| 11688649 | Compact and efficient CMOS inverter | Dafna Beery, Andrew J. Walker | 2023-06-27 |
| 11626407 | DRAM with selective epitaxial cell transistor | Andrew J. Walker, Dafna Beery, Peter Cuevas | 2023-04-11 |
| 11545524 | Selector transistor with continuously variable current drive | Andrew J. Walker, Dafna Beery, Peter Cuevas | 2023-01-03 |
| 11444123 | Selector transistor with metal replacement gate wordline | Dafna Beery, Peter Cuevas, Andrew J. Walker | 2022-09-13 |
| 11417829 | Three dimensional perpendicular magnetic tunnel junction with thin film transistor array | Kuk-Hwan Kim, Dafna Beery, Andrew J. Walker | 2022-08-16 |
| 11342498 | High density 3D magnetic random access memory (MRAM) cell integration using wafer cut and transfer | Marcin Gajek, Kuk-Hwan Kim, Dafna Beery | 2022-05-24 |
| 11329048 | DRAM with selective epitaxial transistor and buried bitline | Andrew J. Walker, Dafna Beery, Peter Cuevas | 2022-05-10 |
| 11302697 | DRAM with selective epitaxial cell transistor | Andrew J. Walker, Dafna Beery, Peter Cuevas | 2022-04-12 |
| 11302586 | Compact and efficient CMOS inverter | Dafna Beery, Andrew J. Walker | 2022-04-12 |
| 11222970 | Perpendicular magnetic tunnel junction memory cells having vertical channels | Kuk-Hwan Kim, Dafna Beery, Andrew J. Walker | 2022-01-11 |
| 10957370 | Integration of epitaxially grown channel selector with two terminal resistive switching memory element | Dafna Beery, Andrew J. Walker | 2021-03-23 |
| 10937479 | Integration of epitaxially grown channel selector with MRAM device | Dafna Beery, Andrew J. Walker | 2021-03-02 |
| 10916582 | Vertically-strained silicon device for use with a perpendicular magnetic tunnel junction (PMTJ) | Kuk-Hwan Kim, Dafna Beery, Andrew J. Walker | 2021-02-09 |
| 10854260 | Adjustable current selectors | Kuk-Hwan Kim, Gian Sharma | 2020-12-01 |
| 10790333 | Flexible substrate for use with a perpendicular magnetic tunnel junction (PMTJ) | Kuk-Hwan Kim, Marcin Gajek, Dafna Beery | 2020-09-29 |
| 10770561 | Methods of fabricating dual threshold voltage devices | Gian Sharma, Kuk-Hwan Kim | 2020-09-08 |
| 10770510 | Dual threshold voltage devices having a first transistor and a second transistor | Gian Sharma, Kuk-Hwan Kim | 2020-09-08 |
| 10679685 | Shared bit line array architecture for magnetoresistive memory | Loc B. Hoang | 2020-06-09 |
| 10658425 | Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channels | Kuk-Hwan Kim, Dafna Beery, Andrew J. Walker | 2020-05-19 |
| 10629649 | Method of making a three dimensional perpendicular magnetic tunnel junction with thin-film transistor | Kuk-Hwan Kim, Dafna Beery, Andrew J. Walker | 2020-04-21 |
| 10614867 | Patterning of high density small feature size pillar structures | Gian Sharma | 2020-04-07 |
| 10497415 | Dual gate memory devices | Kuk-Hwan Kim, Gian Sharma | 2019-12-03 |
| 10468293 | Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channels | Kuk-Hwan Kim, Dafna Beery, Andrew J. Walker | 2019-11-05 |
| 10460778 | Perpendicular magnetic tunnel junction memory cells having shared source contacts | Kuk-Hwan Kim, Dafna Beery, Gian Sharma, Marcin Gajek, Kadriye Deniz Bozdag +4 more | 2019-10-29 |