Issued Patents All Time
Showing 26–50 of 166 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8080432 | High performance MTJ element for STT-RAM and method for making the same | Ru-Ying Tong, Chyu-Jiuh Torng, Witold Kula | 2011-12-20 |
| 8062909 | MRAM with storage layer and super-paramagnetic sensing layer | Po-Kang Wang, Yimin Guo, Tai Min, Ru-Ying Tong | 2011-11-22 |
| 8057925 | Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same | Ru-Ying Tong | 2011-11-15 |
| 8058698 | High performance MTJ element for STT-RAM and method for making the same | Ru-Ying Tong, Chyu-Jiuh Torng, Witold Kula | 2011-11-15 |
| 8058697 | Spin transfer MRAM device with novel magnetic synthetic free layer | Yimin Guo, Ru-Ying Tong | 2011-11-15 |
| 8039885 | MRAM with storage layer and super-paramagnetic sensing layer | Po-Kang Wang, Yimin Guo, Tai Min, Ru-Ying Tong | 2011-10-18 |
| 7999360 | Underlayer for high performance magnetic tunneling junction MRAM | Liubo Hong, Mao-Min Chen, Ru-Yin Tong | 2011-08-16 |
| 7994596 | Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy | Tai Min, Po-Kang Wang | 2011-08-09 |
| 7986497 | Low resistance TMR read head fabricated by a novel oxidation method | Ru-Ying Tong | 2011-07-26 |
| 7978440 | Seed/AFM combination for CCP GMR device | Min Li, Cherng-Chyi Han, Yue Liu, Yu-Hsia Chen, Ru-Ying Tong | 2011-07-12 |
| 7948044 | Low switching current MTJ element for ultra-high STT-RAM and a method for making the same | Ru-Ying Tong, Yimin Guo | 2011-05-24 |
| 7936539 | Bottom spin valve GMR sensor incorporating plural oxygen surfactant layers | Ru-Ying Tong | 2011-05-03 |
| 7838436 | Bottom electrode for MRAM device and method to fabricate it | Rongfu Xiao, Ru-Ying Tong, Chyu-Jinh Torng, Tom Zhong, Witold Kula +4 more | 2010-11-23 |
| 7808027 | Free layer/capping layer for high performance MRAM MTJ | Ru-Ying Tong | 2010-10-05 |
| 7750421 | High performance MTJ element for STT-RAM and method for making the same | Ru-Ying Tong, Chyu-Jiuh Torng, Witold Kula | 2010-07-06 |
| 7696548 | MRAM with super-paramagnetic sensing layer | Po-Kang Wang, Yimin Guo, Tai Min, Ru-Ying Tong | 2010-04-13 |
| 7672093 | Hafnium doped cap and free layer for MRAM device | Ru-Ying Tong, Chyu-Jiuh Torng, Witold Kula | 2010-03-02 |
| 7663131 | SyAF structure to fabricate Mbit MTJ MRAM | Ru-Ying Tong, Chyu-Jiuh Torng, Guangli Liu | 2010-02-16 |
| 7630176 | Seed layer for fabricating spin valve heads for ultra-high density recordings | Hui-Chuan Wang, Ru-Ying Tong, Chyu-Jiuh Torng | 2009-12-08 |
| 7611912 | Underlayer for high performance magnetic tunneling junction MRAM | Liubo Hong, Mao-Min Chen, Ru-Yin Tong | 2009-11-03 |
| 7598579 | Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current | Ru-Ying Tong | 2009-10-06 |
| 7595520 | Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same | Ru-Ying Tong | 2009-09-29 |
| 7564660 | Seed layer for fabricating spin valve heads for ultra-high density recordings | Hui-Chuan Wang, Ru-Ying Tong, Chyu-Jiuh Trong | 2009-07-21 |
| 7542249 | Bottom spin valve with laminated CoFe free layer for ultra-high density recording | Ru-Ying Tong | 2009-06-02 |
| 7536772 | Method of manufacturing a bottom spin valve with a laminated CoFe free layer | Ru-Ying Tong | 2009-05-26 |