Issued Patents All Time
Showing 151–174 of 174 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9590082 | Integration of heterojunction bipolar transistors with different base profiles | Qizhi Liu | 2017-03-07 |
| 9583569 | Profile control over a collector of a bipolar junction transistor | Renata Camillo-Castillo, David L. Harame, Vikas K. Kaushal, Marwan H. Khater | 2017-02-28 |
| 9576899 | Electrical fuse with high off resistance | Qizhi Liu, Ian McCallum-Cook | 2017-02-21 |
| 9543403 | Bipolar junction transistor with multiple emitter fingers | Hanyi Ding, Qizhi Liu | 2017-01-10 |
| 9496250 | Tunable scaling of current gain in bipolar junction transistors | Alvin J. Joseph, Anthony K. Stamper | 2016-11-15 |
| 9496377 | Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic base | Renata Camillo-Castillo, Peng Cheng, Qizhi Liu, John J. Pekarik | 2016-11-15 |
| 9412736 | Embedding semiconductor devices in silicon-on-insulator wafers connected using through silicon vias | Yan Ding, Thomas Kessler, Yves T. Ngu, Robert M. Rassel, Sebastian T. Ventrone | 2016-08-09 |
| 9368608 | Heterojunction bipolar transistor with improved performance and breakdown voltage | Renata Camillo-Castillo, Vikas K. Kaushal, Marwan H. Khater | 2016-06-14 |
| 9324846 | Field plate in heterojunction bipolar transistor with improved break-down voltage | Renata Camillo-Castillo, Marwan H. Khater, Santosh Sharma | 2016-04-26 |
| 9318584 | Isolation scheme for bipolar transistors in BiCMOS technology | Peng Cheng, Peter B. Gray, Robert K. Leidy, Qizhi Liu | 2016-04-19 |
| 9310576 | Integrated circuit having redundant optical signal paths and method of creating same | John J. Ellis-Monaghan, Brendan S. Harris, Thomas Kessler, Yves T. Ngu, Sebastian T. Ventrone | 2016-04-12 |
| 9299590 | Integrated micro-peltier cooling components in silicon-on-insulator (SOI) layers | Richard S. Graf, Ezra D. B. Hall, Jack R. Smith, Sebastian T. Ventrone | 2016-03-29 |
| 9297853 | In-line measurement of transistor device cut-off frequency | John Benoit, Panglijen Candra, Peng Cheng, Blaine J. Gross, John R. Long | 2016-03-29 |
| 9245951 | Profile control over a collector of a bipolar junction transistor | Renata Camillo-Castillo, David L. Harame, Vikas K. Kaushal, Marwan H. Khater | 2016-01-26 |
| 9231074 | Bipolar junction transistors with an air gap in the shallow trench isolation | Renata Camillo-Castillo, Vikas K. Kaushal, Marwan H. Khater, Anthony K. Stamper | 2016-01-05 |
| 9219128 | Methods of fabricating bipolar junction transistors with reduced epitaxial base facets effect for low parasitic collector-base capacitance | Renata Camillo-Castillo, David L. Harame, Vikas K. Kaushal, Marwan H. Khater | 2015-12-22 |
| 9159817 | Heterojunction bipolar transistors with an airgap between the extrinsic base and collector | Renata Camillo-Castillo, Vikas K. Kaushal, Marwan H. Khater, Anthony K. Stamper | 2015-10-13 |
| 9111986 | Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic base | Renata Camillo-Castillo, Peng Cheng, Qizhi Liu, John J. Pekarik | 2015-08-18 |
| 9070734 | Heterojunction bipolar transistors with reduced parasitic capacitance | Renata Camillo-Castillo, Vikas K. Kaushal, Marwan H. Khater | 2015-06-30 |
| 9029229 | Semiconductor device and method of forming the device by forming monocrystalline semiconductor layers on a dielectric layer over isolation regions | James W. Adkisson, Peng Cheng, Vikas K. Kaushal, Qizhi Liu, John J. Pekarik | 2015-05-12 |
| 8957456 | Heterojunction bipolar transistors with reduced parasitic capacitance | Renata Camillo-Castillo, Vikas K. Kaushal, Marwan H. Khater | 2015-02-17 |
| 8946861 | Bipolar device having a monocrystalline semiconductor intrinsic base to extrinsic base link-up region | Renata Camillo-Castillo, Vikas K. Kaushal, Marwan H. Khater | 2015-02-03 |
| 8921195 | Isolation scheme for bipolar transistors in BiCMOS technology | Peng Cheng, Peter B. Gray, Robert K. Leidy, Qizhi Liu | 2014-12-30 |
| 8810005 | Bipolar device having a monocrystalline semiconductor intrinsic base to extrinsic base link-up region | Renata Camillo-Castillo, Peng Cheng, Peter B. Gray, Vikas K. Kaushal, Marwan H. Khater | 2014-08-19 |