Issued Patents All Time
Showing 126–150 of 174 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10331844 | Methods of tuning current ratio in a current mirror for transistors formed with the same FEOL layout and a modified BEOL layout | James W. Adkisson | 2019-06-25 |
| 10312356 | Heterojunction bipolar transistors with multiple emitter fingers and undercut extrinsic base regions | Qizhi Liu, James W. Adkisson, Sarah A. McTaggart, Mark D. Levy | 2019-06-04 |
| 10217852 | Heterojunction bipolar transistors with a controlled undercut formed beneath the extrinsic base | Qizhi Liu, James W. Adkisson, James R. Elliott | 2019-02-26 |
| 10211090 | Transistor with an airgap for reduced base-emitter capacitance and method of forming the transistor | Anthony K. Stamper, Renata Camillo-Castillo | 2019-02-19 |
| 10197730 | Optical through silicon via | Yves T. Ngu, John J. Ellis-Monaghan, Sebastian T. Ventrone, Saurabh Sirohi | 2019-02-05 |
| 10164101 | Transistor with improved channel mobility | Renata Camillo-Castillo, Anthony K. Stamper, Mark D. Jaffe | 2018-12-25 |
| 10153361 | Heterojunction bipolar transistor device integration schemes on a same wafer | Renata Camillo-Castillo, Qizhi Liu, Anthony K. Stamper | 2018-12-11 |
| 10134880 | Self-aligned bipolar junction transistors with a base grown in a dielectric cavity | Qizhi Liu, Alvin J. Joseph, Pernell Dongmo | 2018-11-20 |
| 10121884 | Fabrication of integrated circuit structures for bipolar transistors | Qizhi Liu | 2018-11-06 |
| 10115810 | Heterojunction bipolar transistor with a thickened extrinsic base | Qizhi Liu, John J. Pekarik | 2018-10-30 |
| 10109716 | Turnable breakdown voltage RF FET devices | Qizhi Liu, John J. Pekarik | 2018-10-23 |
| 10090391 | Tunable breakdown voltage RF FET devices | Qizhi Liu, John J. Pekarik | 2018-10-02 |
| 10038063 | Tunable breakdown voltage RF FET devices | Qizhi Liu, John J. Pekarik | 2018-07-31 |
| 10014397 | Bipolar junction transistors with a combined vertical-lateral architecture | Qizhi Liu, David L. Harame, Renata Camillo-Castillo | 2018-07-03 |
| 9947573 | Lateral PiN diodes and schottky diodes | Natalie B. Feilchenfeld, Qizhi Liu | 2018-04-17 |
| 9899375 | Co-integration of self-aligned and non-self aligned heterojunction bipolar transistors | Qizhi Liu | 2018-02-20 |
| 9859382 | Integrated CMOS wafers | Anthony K. Stamper, Renata Camillo-Castillo | 2018-01-02 |
| 9847408 | Fabrication of integrated circuit structures for bipolor transistors | Qizhi Liu | 2017-12-19 |
| 9825157 | Heterojunction bipolar transistor with stress component | Renata Camillo-Castillo, Anthony K. Stamper | 2017-11-21 |
| 9728603 | Bipolar junction transistors with double-tapered emitter fingers | Hanyi Ding, Alvin J. Joseph, Anthony K. Stamper | 2017-08-08 |
| 9722057 | Bipolar junction transistors with a buried dielectric region in the active device region | Renata Camillo-Castillo, Marwan H. Khater | 2017-08-01 |
| 9653566 | Bipolar junction transistors with an air gap in the shallow trench isolation | Renata Camillo-Castillo, Vikas K. Kaushal, Marwan H. Khater, Anthony K. Stamper | 2017-05-16 |
| 9608096 | Implementing stress in a bipolar junction transistor | Renata Camillo-Castillo, Qizhi Liu, James W. Adkisson, David L. Harame | 2017-03-28 |
| 9606291 | Multilevel waveguide structure | John J. Ellis-Monaghan, Brendan S. Harris, Yves T. Ngu, Sebastian T. Ventrone | 2017-03-28 |
| 9588293 | MEMS based photonic devices and methods for forming | John J. Ellis-Monaghan, Brendan S. Harris, Thomas Kessler, Yves T. Ngu, Sebastian T. Ventrone | 2017-03-07 |