XH

Xiaoqiu Huang

FS Freeescale Semiconductor: 3 patents #982 of 3,767Top 30%
IA Infineon Technologies Austria Ag: 2 patents #458 of 1,126Top 45%
🗺 Texas: #28,318 of 125,132 inventorsTop 25%
Overall (All Time): #939,179 of 4,157,543Top 25%
5
Patents All Time

Issued Patents All Time

Showing 1–5 of 5 patents

Patent #TitleCo-InventorsDate
11545545 Superjunction device with oxygen inserted Si-layers Martin Poelzl, Robert Haase, Sylvain Leomant, Maximilian Roesch, Ravi Keshav Joshi +2 more 2023-01-03
10790353 Semiconductor device with superjunction and oxygen inserted Si-layers Martin Poelzl, Robert Haase, Sylvain Leomant, Maximilian Roesch, Ravi Keshav Joshi +2 more 2020-09-29
8188543 Electronic device including a conductive structure extending through a buried insulating layer Todd C. Roggenbauer, Vishnu Khemka, Ronghua Zhu, Amitava Bose, Paul Hui 2012-05-29
7820519 Process of forming an electronic device including a conductive structure extending through a buried insulating layer Todd C. Roggenbauer, Vishnu Khemka, Ronghua Zhu, Amitava Bose, Paul Hui +1 more 2010-10-26
7645651 LDMOS with channel stress Veeraraghavan Dhandapani, Bich-Yen Nguyen, Amanda M. Kroll, Daniel T. Pham 2010-01-12