WB

Wayne R. Burger

FS Freeescale Semiconductor: 9 patents #343 of 3,767Top 10%
Motorola: 3 patents #3,303 of 12,470Top 30%
NU Nxp Usa: 2 patents #735 of 2,066Top 40%
MIT: 1 patents #4,386 of 9,367Top 50%
Overall (All Time): #320,860 of 4,157,543Top 8%
15
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
9871008 Monolithic microwave integrated circuits Paul W. Sanders, Thuy B. Dao, Joel E. Keys, Michael F. Petras, Robert A. Pryor +1 more 2018-01-16
9818862 Semiconductor device with floating field plates Zihao M. Gao, David C. Burdeaux, Christopher P. Dragon, Hernan Rueda 2017-11-14
9520367 Trenched Faraday shielding Zihao M. Gao, David C. Burdeaux, Robert A. Pryor, Philippe Renaud 2016-12-13
9508599 Methods of making a monolithic microwave integrated circuit Paul W. Sanders, Thuy B. Dao, Joel E. Keys, Michael F. Petras, Robert A. Pryor +1 more 2016-11-29
9064712 Monolithic microwave integrated circuit Paul W. Sanders, Thuy B. Dao, Joel E. Keys, Michael F. Petras, Robert A. Pryor +1 more 2015-06-23
8906773 Integrated circuits including integrated passive devices and methods of manufacture thereof Xiaowei Ren 2014-12-09
8283748 Low loss substrate for integrated passive devices Xiaowei Ren, Colin Kerr, Mark Arwyn Bennett 2012-10-09
8134241 Electronic elements and devices with trench under bond pad feature Jeffrey K. Jones, Margaret A. Szymanowski, Michele L. Miera, Xiaowei Ren, Mark Arwyn Bennett +1 more 2012-03-13
8071461 Low loss substrate for integrated passive devices Xiaowei Ren, Colin Kerr, Mark Arwyn Bennett 2011-12-06
7998852 Methods for forming an RF device with trench under bond pad feature Jeffrey K. Jones, Margaret A. Szymanowski, Michele L. Miera, Xiaowei Ren, Mark Arwyn Bennett +1 more 2011-08-16
7525152 RF power transistor device with metal electromigration design and method thereof Christopher P. Dragon, Robert A. Pryor 2009-04-28
6744117 High frequency semiconductor device and method of manufacture Christopher P. Dragon, Daniel J. Lamey 2004-06-01
5578860 Monolithic high frequency integrated circuit structure having a grounded source configuration Julio C. Costa, Natalino Camilleri, Christopher P. Dragon, Daniel J. Lamey, David K. Lovelace +1 more 1996-11-26
5358883 Lateral bipolar transistor Yee-Chaung See 1994-10-25
4579609 Growth of epitaxial films by chemical vapor deposition utilizing a surface cleaning step immediately before deposition L. Rafael Reif, Thomas J. Donahue 1986-04-01