Issued Patents All Time
Showing 26–50 of 63 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9076852 | III nitride power device with reduced QGD | Sadiki Jordan | 2015-07-07 |
| 8969918 | Enhancement mode gallium nitride transistor with improved gate characteristics | Alexander Lidow, Robert Beach, Alana Nakata, Guang Yuan Zhao | 2015-03-03 |
| 8952352 | III-nitride power device | Robert Beach, Zhi He | 2015-02-10 |
| 8940567 | Method for fabricating a III-nitride semiconductor device | Robert Beach, Zhi He | 2015-01-27 |
| 8890168 | Enhancement mode GaN HEMT device | Alexander Lidow, Robert Beach, Alana Nakata, Guang Yuang Zhao | 2014-11-18 |
| 8853749 | Ion implanted and self aligned gate structure for GaN transistors | Alexander Lidow, Robert Beach, Robert Strittmatter, Guang Yuan Zhao, Alana Nakata | 2014-10-07 |
| 8823012 | Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same | Alexander Lidow, Robert Beach, Alana Nakata, Guang Yuan Zhao, Robert Strittmatter +1 more | 2014-09-02 |
| 8803199 | III-nitride semiconductor device with stepped gate | Michael A. Briere, Paul Bridger | 2014-08-12 |
| 8785974 | Bumped, self-isolated GaN transistor chip with electrically isolated back surface | Alexander Lidow, Robert Beach, Alana Nakata | 2014-07-22 |
| 8536624 | Active area shaping for III-nitride devices | Michael A. Briere, Paul Bridger | 2013-09-17 |
| 8450721 | III-nitride power semiconductor device | Robert Beach, Zhi He | 2013-05-28 |
| 8436398 | Back diffusion suppression structures | Alexander Lidow, Robert Beach, Guang Yuan Zhao | 2013-05-07 |
| 8404508 | Enhancement mode GaN HEMT device and method for fabricating the same | Alexander Lidow, Robert Beach, Alana Nakata, Guang Yuan Zhao | 2013-03-26 |
| 8350294 | Compensated gate MISFET and method for fabricating the same | Alexander Lidow, Robert Beach, Alana Nakata, Guang Yuan Zhao | 2013-01-08 |
| 8338861 | III-nitride semiconductor device with stepped gate trench and process for its manufacture | Michael A. Briere, Paul Bridger | 2012-12-25 |
| 8174051 | III-nitride power device | Yanping Ma, Robert Beach, Michael A. Briere | 2012-05-08 |
| 7973304 | III-nitride semiconductor device | Robert Beach, Zhi He | 2011-07-05 |
| 7692316 | Audio amplifier assembly | Jorge Cerezo, Ajit Dubhashi, Qun Zhao | 2010-04-06 |
| 7679111 | Termination structure for a power semiconductor device | Nazanin Amani, Daniel M. Kinzer | 2010-03-16 |
| 7619280 | Current sense trench type MOSFET with improved accuracy and ESD withstand capability | Ying Xiao, Kyle Spring, Daniel M. Kinzer | 2009-11-17 |
| 7579650 | Termination design for deep source electrode MOSFET | Timothy Henson | 2009-08-25 |
| 7482654 | MOSgated power semiconductor device with source field electrode | Timothy Henson, Naresh Thapar, Paul M. Harvey, David Kent | 2009-01-27 |
| 7410851 | Low voltage superjunction MOSFET | Timothy Henson | 2008-08-12 |
| 7390717 | Trench power MOSFET fabrication using inside/outside spacers | Paul M. Harvey, David Kent, Robert Montgomery, Kyle Spring | 2008-06-24 |
| 7368353 | Trench power MOSFET with reduced gate resistance | Paul M. Harvey, Dave Kent, Robert Montgomery, Hugo Burke, Kyle Spring | 2008-05-06 |