Issued Patents All Time
Showing 26–46 of 46 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7178400 | Physical quantity sensor having multiple through holes | Minoru Murata, Kenichi Yokoyama | 2007-02-20 |
| 7138286 | Light-emitting semiconductor device using group III nitrogen compound | Katsuhide Manabe, Hisaki Kato, Michinari Sassa, Shiro Yamazaki, Naoki Shibata +1 more | 2006-11-21 |
| 7018915 | Group III nitride compound semiconductor device and method for forming an electrode | Naoki Shibata, Toshiya Uemura, Yasuo Koide, Masanori Murakami | 2006-03-28 |
| 7015515 | Group III nitride compound semiconductor device having a superlattice structure | Tetsuya Taki, Katsuhisa Sawazaki, Naoki Kaneyama, Toshiya Uemura | 2006-03-21 |
| 7001790 | Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity | Katsuhide Manabe, Hisaki Kato, Michinari Sassa, Shiro Yamazaki, Naoki Shibata +1 more | 2006-02-21 |
| 6933169 | Optical semiconductor device | Naoki Shibata | 2005-08-23 |
| 6861663 | Group III nitride compound semiconductor light-emitting device | Katsuhisa Sawazaki, Naoki Kaneyama | 2005-03-01 |
| 6806571 | III nitride compound semiconductor element an electrode forming method | Naoki Shibata, Toshiya Uemura, Yasuo Koide, Masanori Murakami | 2004-10-19 |
| 6762070 | Method of manufacturing group III nitride compound semiconductor light emitting device having a light emission output of high light intensity | Naoki Kaneyama, Katsuhisa Sawazaki | 2004-07-13 |
| 6573114 | Optical semiconductor device | Naoki Shibata | 2003-06-03 |
| 6452214 | Group III nitride compound semiconductor light-emitting device having a light emission output of high light intensity | Naoki Kaneyama, Katsuhisa Sawazaki | 2002-09-17 |
| 6265726 | Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity | Katsuhide Manabe, Hisaki Kato, Michinari Sassa, Shiro Yamazaki, Naoki Shibata +1 more | 2001-07-24 |
| 6191436 | Optical semiconductor device | Naoki Shibata | 2001-02-20 |
| 6121127 | Methods and devices related to electrodes for p-type group III nitride compound semiconductors | Naoki Shibata, Junichi Umezaki, Toshiya Uemura, Takahiro Kozawa, Tomohiko Mori +1 more | 2000-09-19 |
| 6008539 | Electrodes for p-type group III nitride compound semiconductors | Naoki Shibata, Junichi Umezaki, Toshiya Uemura, Takahiro Kozawa, Tomohiko Mori +1 more | 1999-12-28 |
| 6005258 | Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities | Katsuhide Manabe, Hisaki Kato, Michinari Sassa, Shiro Yamazaki, Naoki Shibata +1 more | 1999-12-21 |
| 5650641 | Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device | Michinari Sassa, Masayoshi Koike, Katsuhide Manabe, Norikatsu Koide, Hisaki Kato +2 more | 1997-07-22 |
| 5364977 | Clathrate compounds comprising tetrakisphenols as host | Hiroshi Suzuki, Takako Ichikawa | 1994-11-15 |
| 5021105 | Copper alloy for electronic instruments | Yoshimasa Ohyama, Tohru Tanigawa, Shigeo Shinozaki, Shoji Shiga | 1991-06-04 |
| 4732731 | Copper alloy for electronic instruments and method of manufacturing the same | Shoji Shiga, Toru Tanigawa, Yoshimasa Oyama, Shigeo Shinozaki | 1988-03-22 |
| 4529552 | Composite oxyalkoxides and derivatives thereof | Iwao Kato, Yoshihiko Nakamura, Tetsuo Yoshimoto, Masanori Iwamori, Kazuo Ozawa | 1985-07-16 |