Issued Patents All Time
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8903388 | Compact base station device and signaling method | — | 2014-12-02 |
| 8808560 | Method for producing single-crystal diamond movable structure | Meiyong Liao, Shunichi Hishida | 2014-08-19 |
| 8435597 | Diamond UV-sensor element and manufacturing method thereof, UV-sensor unit, and method of treating diamond single crystal | Meiyong Liao, Jose Antonio Alvarez, Jean-Paul Kleider | 2013-05-07 |
| 8338834 | Diamond semiconductor device | Tokuyuki Teraji, Satoshi Koizumi | 2012-12-25 |
| 7884372 | Diamond UV-Ray sensor | Meiyong Liao, Jose Antonio Alvarez | 2011-02-08 |
| 7872274 | n-Electrode for III group nitride based compound semiconductor element | Shunsuke Murai, Masanori Murakami, Naoki Shibata | 2011-01-18 |
| 7768091 | Diamond ultraviolet sensor | Meiyong Liao, Antonio Alvarez Jose | 2010-08-03 |
| 7556469 | Revolving-frame structure of construction machinery | Nozomu Tanaka, Hiroyuki Isobe | 2009-07-07 |
| 7018915 | Group III nitride compound semiconductor device and method for forming an electrode | Naoki Shibata, Toshiya Uemura, Makoto Asai, Masanori Murakami | 2006-03-28 |
| 6943376 | Electrode for p-type SiC | Osamu Nakatsuka, Ryohei Konishi, Ryuichi Yasukochi, Masanori Murakami, Naoki Shibata | 2005-09-13 |
| 6806571 | III nitride compound semiconductor element an electrode forming method | Naoki Shibata, Toshiya Uemura, Makoto Asai, Masanori Murakami | 2004-10-19 |
| 6573117 | GaN related compound semiconductor and process for producing the same | Toshiya Uemura, Naoki Shibata, Shizuyo Noiri, Masanori Murakami, Jun Ito | 2003-06-03 |
| 6500689 | Process for producing GaN related compound semiconductor | Toshiya Uemura, Naoki Shibata, Shizuyo Noiri, Masanori Murakami, Jun Ito | 2002-12-31 |
| 6291840 | GaN related compound semiconductor light-emitting device | Toshiya Uemura, Naoki Shibata, Shizuyo Noiri, Masanori Murakami, Jun Ito | 2001-09-18 |
| 6033929 | Method for making II-VI group compound semiconductor device | Masanori Murakami, Nobuaki Teraguchi | 2000-03-07 |
| 5786269 | II-VI group compound semiconductor device and method for manufacturing the same | Masanori Murakami, Nobuaki Teraguchi, Yoshitaka Tomomura | 1998-07-28 |
| 5767536 | II-VI group compound semiconductor device | Masanori Murakami, Nobuaki Teraguchi, Yoshitaka Tomomura | 1998-06-16 |
| 5587609 | II-VI group compound semiconductor device metallic nitride ohmic contact for p-type | Masanori Murakami, Nobuaki Teraguchi, Yoshitaka Tomomura | 1996-12-24 |