Issued Patents All Time
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9991415 | Display device and method of producing display device | Takuya Sato, Keiji Watanabe, Kohichiroh Adachi, Akihide Shibata, Hiroshi Iwata | 2018-06-05 |
| 9660068 | Nitride semiconductor | Yushi Inoue, Atsushi Ogawa, Nobuyuki Ito | 2017-05-23 |
| 9111839 | Epitaxial wafer for heterojunction type field effect transistor | Masayuki Hoteida, Daisuke Honda, Nobuyuki Ito, Masakazu Matsubayashi, Haruhiko Matsukasa | 2015-08-18 |
| 7973338 | Hetero junction field effect transistor and method of fabricating the same | — | 2011-07-05 |
| 7745852 | Hetero junction field effect transistor and method of fabricating the same | — | 2010-06-29 |
| 7468524 | Field-effect transistor | — | 2008-12-23 |
| 7425721 | Field-effect transistor | — | 2008-09-16 |
| 7145237 | Electrode employing nitride-based semiconductor of III-V group compound, and producing method thereof | — | 2006-12-05 |
| 6521998 | Electrode structure for nitride III-V compound semiconductor devices | Takeshi Kamikawa | 2003-02-18 |
| 6429111 | Methods for fabricating an electrode structure | — | 2002-08-06 |
| 6348704 | Semiconductor device having successful schottky characteristics | — | 2002-02-19 |
| 6222204 | Electrode structure and method for fabricating the same | — | 2001-04-24 |
| 6201265 | Group III-V type nitride compound semiconductor device and method of manufacturing the same | — | 2001-03-13 |
| 6177685 | Nitride-type III-V HEMT having an InN 2DEG channel layer | Akira Suzuki | 2001-01-23 |
| 6043514 | Group III-V type nitride semiconductor device | — | 2000-03-28 |
| 6033929 | Method for making II-VI group compound semiconductor device | Masanori Murakami, Yasuo Koide | 2000-03-07 |
| 5966629 | Method for fabricating an electrode structure | — | 1999-10-12 |
| 5917196 | Group III-V type nitride compound semiconductor light-emitting device | — | 1999-06-29 |
| 5786269 | II-VI group compound semiconductor device and method for manufacturing the same | Masanori Murakami, Yasuo Koide, Yoshitaka Tomomura | 1998-07-28 |
| 5767536 | II-VI group compound semiconductor device | Masanori Murakami, Yasuo Koide, Yoshitaka Tomomura | 1998-06-16 |
| 5751021 | Semiconductor light-emitting device | — | 1998-05-12 |
| 5747827 | Optoelectronic semiconductor device having a miniband | Geoffrey Duggan, Judy Megan Rorison, Yoshitaka Tomomura | 1998-05-05 |
| 5701035 | Electrode structure and method for fabricating the same | — | 1997-12-23 |
| 5587609 | II-VI group compound semiconductor device metallic nitride ohmic contact for p-type | Masanori Murakami, Yasuo Koide, Yoshitaka Tomomura | 1996-12-24 |
| 5571391 | Electrode structure and method for fabricating the same | — | 1996-11-05 |