Issued Patents All Time
Showing 26–50 of 173 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10784356 | Embedded sonos with triple gate oxide and manufacturing method of the same | Igor G. Kouznetsov, Venkatraman Prabhakar, Ali Keshavarzi | 2020-09-22 |
| 10700083 | Method of ONO integration into logic CMOS flow | Bo Jin, Fredrick B. Jenne | 2020-06-30 |
| 10699901 | SONOS ONO stack scaling | Frederick B. Jenne, Sagy Levy | 2020-06-30 |
| 10615289 | Nonvolatile charge trap memory device having a high dielectric constant blocking region | Igor Polishchuk, Sagy Levy | 2020-04-07 |
| 10593812 | Radical oxidation process for fabricating a nonvolatile charge trap memory device | Sagy Levy, Jeong Soo Byun | 2020-03-17 |
| 10446656 | Memory transistor with multiple charge storing layers and a high work function gate electrode | Igor Polishchuk, Sagy Levy | 2019-10-15 |
| 10424592 | Method of integrating a charge-trapping gate stack into a CMOS flow | — | 2019-09-24 |
| 10418373 | Method of ONO stack formation | — | 2019-09-17 |
| 10374067 | Oxide-nitride-oxide stack having multiple oxynitride layers | Sagy Levy, Fredrick B. Jenne, Sam Geha | 2019-08-06 |
| 10332599 | Bias scheme for word programming in non-volatile memory and inhibit disturb reduction | Gary Menezes, Ali Keshavarzi, Venkatraman Prabhakar | 2019-06-25 |
| 10319733 | Oxide formation in a plasma process | Jeong Soo Byun | 2019-06-11 |
| 10312336 | Memory transistor with multiple charge storing layers and a high work function gate electrode | Igor Polishchuk, Sagy Levy | 2019-06-04 |
| 10304968 | Radical oxidation process for fabricating a nonvolatile charge trap memory device | Sagy Levy, Jeong Soo Byun | 2019-05-28 |
| 10263087 | Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region | Sagy Levy, Fredrick B. Jenne | 2019-04-16 |
| 10199229 | SONOS stack with split nitride memory layer | Fredrick B. Jenne | 2019-02-05 |
| 10153294 | Method of ONO stack formation | — | 2018-12-11 |
| 10128258 | Oxide formation in a plasma process | Jeong Soo Byun | 2018-11-13 |
| 10079314 | Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region | Sagy Levy, Frederick B. Jenne | 2018-09-18 |
| 10079243 | Method of integrating a charge-trapping gate stack into a CMOS flow | — | 2018-09-18 |
| 10062573 | Embedded SONOS with triple gate oxide and manufacturing method of the same | Igor G. Kouznetsov, Venkatraman Prabhakar, Ali Keshavarzi | 2018-08-28 |
| 10020317 | Memory device with multi-layer channel and charge trapping layer | Renhua Zhang, Lei Xue, Rinji Sugino | 2018-07-10 |
| 10002878 | Complementary SONOS integration into CMOS flow | Venkatraman Prabhakar, Igor G. Kouznetsov | 2018-06-19 |
| 9997641 | SONOS ONO stack scaling | Fredrick B. Jenne, Sagy Levy | 2018-06-12 |
| 9997528 | Complimentary SONOS integration into CMOS flow | Venkatraman Prabhakar, Igor G. Kouznetsov | 2018-06-12 |
| 9929240 | Memory transistor with multiple charge storing layers and a high work function gate electrode | Igor Polishchuk, Sagy Levy | 2018-03-27 |