Issued Patents All Time
Showing 25 most recent of 72 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12266521 | Oxide-nitride-oxide stack having multiple oxynitride layers | Krishnaswamy Ramkumar, Fredrick B. Jenne, Sam Geha | 2025-04-01 |
| 12009401 | Memory transistor with multiple charge storing layers and a high work function gate electrode | Igor Polishchuk, Krishnaswamy Ramkumar | 2024-06-11 |
| 11784243 | Oxide-nitride-oxide stack having multiple oxynitride layers | Krishnaswamy Ramkumar, Fredrick B. Jenne, Sam Geha | 2023-10-10 |
| 11721733 | Memory transistor with multiple charge storing layers and a high work function gate electrode | Igor Polishchuk, Krishnaswamy Ramkumar | 2023-08-08 |
| 11456365 | Memory transistor with multiple charge storing layers and a high work function gate electrode | Igor Polishchuk, Krishnaswamy Ramkumar | 2022-09-27 |
| 11222965 | Oxide-nitride-oxide stack having multiple oxynitride layers | Krishnaswamy Ramkumar, Fredrick B. Jenne, Sam Geha | 2022-01-11 |
| 11127855 | Lateral diffused metal oxide semiconductor field effect (LDMOS) transistor and device having LDMOS transistors | Daniel A. Sherman, David Mistele | 2021-09-21 |
| 11056565 | Flash memory device and method | Igor Polishchuk, Krishnaswamy Ramkumar | 2021-07-06 |
| 10903068 | Oxide-nitride-oxide stack having multiple oxynitride layers | Krishnaswamy Ramkumar, Fredrick B. Jenne, Sam Geha | 2021-01-26 |
| 10903342 | Oxide-nitride-oxide stack having multiple oxynitride layers | Krishnaswamy Ramkumar, Fredrick B. Jenne, Sam Geha | 2021-01-26 |
| 10903325 | Memory transistor with multiple charge storing layers and a high work function gate electrode | Igor Polishchuk, Krishnaswarny Ramkumar | 2021-01-26 |
| 10896973 | Oxide-nitride-oxide stack having multiple oxynitride layers | Krishnaswamy Ramkumar, Fredrick B. Jenne, Sam Geha | 2021-01-19 |
| 10699901 | SONOS ONO stack scaling | Frederick B. Jenne, Krishnaswamy Ramkumar | 2020-06-30 |
| 10615289 | Nonvolatile charge trap memory device having a high dielectric constant blocking region | Igor Polishchuk, Krishnaswamy Ramkumar | 2020-04-07 |
| 10593812 | Radical oxidation process for fabricating a nonvolatile charge trap memory device | Krishnaswamy Ramkumar, Jeong Soo Byun | 2020-03-17 |
| 10446656 | Memory transistor with multiple charge storing layers and a high work function gate electrode | Igor Polishchuk, Krishnaswamy Ramkumar | 2019-10-15 |
| 10374067 | Oxide-nitride-oxide stack having multiple oxynitride layers | Krishnaswamy Ramkumar, Fredrick B. Jenne, Sam Geha | 2019-08-06 |
| 10312336 | Memory transistor with multiple charge storing layers and a high work function gate electrode | Igor Polishchuk, Krishnaswamy Ramkumar | 2019-06-04 |
| 10304968 | Radical oxidation process for fabricating a nonvolatile charge trap memory device | Krishnaswamy Ramkumar, Jeong Soo Byun | 2019-05-28 |
| 10263087 | Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region | Fredrick B. Jenne, Krishnaswamy Ramkumar | 2019-04-16 |
| 10217826 | Apparatus of a metal-oxide-semiconductor (MOS) transistor including a multi-split gate | Johnatan A. Kantarovsky, Sharon Levin, David Mistele | 2019-02-26 |
| 10079314 | Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region | Frederick B. Jenne, Krishnaswamy Ramkumar | 2018-09-18 |
| 9997641 | SONOS ONO stack scaling | Fredrick B. Jenne, Krishnaswamy Ramkumar | 2018-06-12 |
| 9929240 | Memory transistor with multiple charge storing layers and a high work function gate electrode | Igor Polishchuk, Krishnaswamy Ramkumar | 2018-03-27 |
| 9837411 | Semiconductor die with a metal via | Sharon Levin, Alexey Heiman | 2017-12-05 |