Issued Patents All Time
Showing 26–49 of 49 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6455384 | Method for forming MOSFET device having source/drain extension regions located underlying L shaped spacers | Shyue Fong Quek, Jun Song, Xing Yu | 2002-09-24 |
| 6416909 | Alternating phase shift mask and method for fabricating the alignment monitor | Shyue Fong Quek, Swee Hong Choo, Sang Yee Loong | 2002-07-09 |
| 6406948 | Method for forming an ESD protection network for SOI technology with the ESD device formed in an underlying silicon substrate | Song Jun, Sang Yee Loong, Shyue Fong Quek | 2002-06-18 |
| 6406975 | Method for fabricating an air gap shallow trench isolation (STI) structure | Victor Lim, Young Way Teh, Alex See, Yong Kong Siew | 2002-06-18 |
| 6406994 | Triple-layered low dielectric constant dielectric dual damascene approach | Shyue Fong Quek, Yee Chong Wong, Sang Yee Loong | 2002-06-18 |
| 6399431 | ESD protection device for SOI technology | Jun Song, Shyue Fong Quek, Sang Yee Loong | 2002-06-04 |
| 6380106 | Method for fabricating an air gap metallization scheme that reduces inter-metal capacitance of interconnect structures | Seng-Keong Victor Lim, Young Way Teh, Alex See, Yong Kong Siew | 2002-04-30 |
| 6376319 | Process to fabricate a source-drain extension | Shyue Fong Quek, Jun Song, Xing Yu | 2002-04-23 |
| 6376379 | Method of hard mask patterning | Shyue Fong Quek, Jun Song, Sang Yee Loong | 2002-04-23 |
| 6329253 | Thick oxide MOS device used in ESD protection circuit | Jun Song, Yonqzang Zhang, Shyue Fong Quek, Jun Cai, Puay Ing Ong | 2001-12-11 |
| 6319783 | Process to fabricate a novel source-drain extension | Shyue Pong Quek, Jun Song, Xing Yu | 2001-11-20 |
| 6303414 | Method of forming PID protection diode for SOI wafer | Shyue Fong Quek, Sang Yee Loong, Jun Song | 2001-10-16 |
| 6300172 | Method of field isolation in silicon-on-insulator technology | Shyue Pong Quek, Lap Chan, Sang Yee Loong | 2001-10-09 |
| 6284609 | Method to fabricate a MOSFET using selective epitaxial growth to form lightly doped source/drain regions | Shyue Fong Quek, Puay Ing Ong, Sang Yee Loong | 2001-09-04 |
| 6275089 | Low voltage controllable transient trigger network for ESD protection | Jun Song, Shyue Fong Quek, Lap Chan | 2001-08-14 |
| 6261917 | High-K MOM capacitor | Shyue Fong Quek, Sang Yee Loong, Puay Ing Ong | 2001-07-17 |
| 6258677 | Method of fabricating wedge isolation transistors | Shyue Fong Quek, Sang Yee Loong, Jun Song | 2001-07-10 |
| 6252290 | Method to form, and structure of, a dual damascene interconnect device | Shyue Fong Quek, Lap Chan, Sang Yee Loong | 2001-06-26 |
| 6248618 | Method of fabrication of dual gate oxides for CMOS devices | Shyue Fong Quek, Puay Ing Ong, Sang Yee Loong | 2001-06-19 |
| 6214680 | Method to fabricate a sub-quarter-micron MOSFET with lightly doped source/drain regions | Shyue Fong Quek, Puay Ink Ong, Sang Yee Loong | 2001-04-10 |
| 6177324 | ESD protection device for STI deep submicron technology | Jun Song, Shyue Fong Quek, Lap Chan | 2001-01-23 |
| 6143598 | Method of fabrication of low leakage capacitor | John E. Martin, Lap Chan, John Sudijono | 2000-11-07 |
| 6110787 | Method for fabricating a MOS device | Lap Chan, Shyue Pong Quek, Sang Yee Loong | 2000-08-29 |
| 6090691 | Method for forming a raised source and drain without using selective epitaxial growth | Shyue Fong Quek, Xing Yu, Ying-Keung Leung | 2000-07-18 |