XL

Xiao-Yu Li

AM AMD: 25 patents #398 of 9,279Top 5%
AM Amazon: 14 patents #957 of 19,158Top 5%
VA Vantis: 14 patents #6 of 24Top 25%
LS Lattice Semiconductor: 4 patents #136 of 544Top 25%
IBM: 3 patents #26,272 of 70,183Top 40%
MS Motorola Solutions: 2 patents #674 of 2,212Top 35%
LC Lanzhou Institute Of Chemical Physics, Cas: 1 patents #18 of 46Top 40%
BT Beijing University Of Chemical Technology: 1 patents #71 of 305Top 25%
📍 Lanzhou, CA: #1 of 5 inventorsTop 20%
Overall (All Time): #34,061 of 4,157,543Top 1%
64
Patents All Time

Issued Patents All Time

Showing 51–64 of 64 patents

Patent #TitleCo-InventorsDate
6075293 Semiconductor device having a multi-layer metal interconnect structure Sunil Mehta, Van-Hung Pham, Amit P. Marathe 2000-06-13
6064105 Data retention of EEPROM cell with shallow trench isolation using thicker liner oxide Radu Barsan, Sunil Mehta 2000-05-16
6040019 Method of selectively annealing damaged doped regions Emi Ishida, Sunil Mehta 2000-03-21
6009033 Method of programming and erasing an EEPROM device under an elevated temperature and apparatus thereof Sunil Mehta 1999-12-28
5999449 Two transistor EEPROM cell using P-well for tunneling across a channel Sunil Mehta 1999-12-07
5969992 EEPROM cell using P-well for tunneling across a channel Sunil Mehta 1999-10-19
5942780 Integrated circuit having, and process providing, different oxide layer thicknesses on a substrate Radu Barsan, Sunil Mehta 1999-08-24
5904575 Method and apparatus incorporating nitrogen selectively for differential oxide growth Emi Ishida, Sunil Mehta 1999-05-18
5885904 Method to incorporate, and a device having, oxide enhancement dopants using gas immersion laser doping (GILD) for selectively growing an oxide layer Sunil Mehta, Emi Ishida 1999-03-23
5854114 Data retention of EEPROM cell with shallow trench isolation using thicker liner oxide Radu Barsan, Sunil Mehta 1998-12-29
5841701 Method of charging and discharging floating gage transistors to reduce leakage current Radu Barsan, Sunil Mehta 1998-11-24
5795627 Method for annealing damaged semiconductor regions allowing for enhanced oxide growth Sunil Mehta, Emi Ishida 1998-08-18
5761116 V.sub.pp only scalable EEPROM memory cell having transistors with thin tunnel gate oxide Radu Barsan 1998-06-02
5672521 Method of forming multiple gate oxide thicknesses on a wafer substrate Radu Barsan, Sunil Mehta 1997-09-30