| 6225201 |
Ultra short transistor channel length dictated by the width of a sidewall spacer |
Mark I. Gardner, Jon D. Cheek, Thomas E. Spikes, Jr. |
2001-05-01 |
| 6162692 |
Integration of a diffusion barrier layer and a counter dopant region to maintain the dopant level within the junctions of a transistor |
Mark I. Gardner, Thien T. Nguyen |
2000-12-19 |
| 5930620 |
Resistance to gate dielectric breakdown at the edges of shallow trench isolation structures |
Mark I. Gardner, H. Jim Fulford |
1999-07-27 |
| 5904517 |
Ultra thin high K spacer material for use in transistor fabrication |
Mark I. Gardner, H. Jim Fulford |
1999-05-18 |
| 5899721 |
Method of based spacer formation for ultra-small sapcer geometries |
Mark I. Gardner |
1999-05-04 |
| 5885861 |
Reduction of dopant diffusion by the co-implantation of impurities into the transistor gate conductor |
Mark I. Gardner, H. Jim Fulford |
1999-03-23 |