Issued Patents All Time
Showing 251–265 of 265 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5426328 | BICDMOS structures | Richard K. Williams, Michael E. Cornell, Jun-Wei Chen | 1995-06-20 |
| 5422508 | BiCDMOS structure | Richard K. Williams, Michael E. Cornell, Jun-Wei Chen | 1995-06-06 |
| 5416039 | Method of making BiCDMOS structures | Richard K. Williams, Michael E. Cornell, Jun-Wei Chen | 1995-05-16 |
| 5374569 | Method for forming a BiCDMOS | Richard K. Williams, Michael E. Cornell, Jun-Wei Chen | 1994-12-20 |
| 5341011 | Short channel trenched DMOS transistor | Fwu-Iuan Hshieh, Mike F. Chang | 1994-08-23 |
| 5304831 | Low on-resistance power MOS technology | Fwu-Iuan Hshieh, Mike F. Chang, Jun-Wei Chen, King Owyang, Dorman C. Pitzer +1 more | 1994-04-19 |
| 5168331 | Power metal-oxide-semiconductor field effect transistor | — | 1992-12-01 |
| 5136349 | Closed cell transistor with built-in voltage clamp | Izak Bencuya | 1992-08-04 |
| 4860080 | Isolation for transistor devices having a pilot structure | — | 1989-08-22 |
| 4809045 | Insulated gate device | — | 1989-02-28 |
| 4803533 | IGT and MOSFET devices having reduced channel width | Mike F. Chang, George L. Gauffreau, King Owyang | 1989-02-07 |
| 4795716 | Method of making a power IC structure with enhancement and/or CMOS logic | Robert S. Wrathall, Mike F. Chang, Robert G. Hodgins | 1989-01-03 |
| 4794432 | Mosfet structure with substrate coupled source | King Owyang, Robert G. Hodgins | 1988-12-27 |
| 4682195 | Insulated gate device with configured emitter contact pad | — | 1987-07-21 |
| 4641162 | Current limited insulated gate device | — | 1987-02-03 |