Partial year: Data through Q3 2025 (Sept 30). Full-year totals not yet available.
JL

Jiun-Ren Lai

TSMC: 1 patents #2,025 of 3,957Top 55%
📍 Zhubeikou, TW: #122 of 275 inventorsTop 45%
Overall (2025): #344,294 of 469,880Top 75%
1
Patents 2025

Issued Patents 2025

Showing 1–1 of 1 patents

Patent #TitleCo-InventorsDate
12266612 Method for forming a semiconductor device including forming a first interconnect structure on one side of a substrate having first metal feature closer the substrate than second metal feature and forming first and second tsv on other side of substrate connecting to the metal features Hsien-Pin Hu, Chen-Hua Yu, Ming-Fa Chen, Jing-Cheng Lin, Yung-Chi Lin 2025-04-01