| 12432964 |
Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor (CMOS) integrated circuit technology |
Anand S. Murthy, Robert Ehlert, Han Wui Then, Marko Radosavljevic, Nicole K. Thomas +1 more |
2025-09-30 |
| 12414366 |
Co-integration of high voltage (HV) and low voltage (LV) transistor structures, using channel height and spacing modulation |
Prashant Majhi, Anand S. Murthy, Rushabh SHAH, Susmita Ghose |
2025-09-09 |
| 12402387 |
Integrated circuit structures including a titanium silicide material |
Dan S. LAVRIC, Thomas T. TROEGER, Suresh Vishwanath, Jitendra Kumar Jha, John F. Richards +2 more |
2025-08-26 |
| 12342574 |
Contact resistance reduction in transistor devices with metallization on both sides |
Koustav Ganguly, Ryan Keech, Subrina RAFIQUE, Anand S. Murthy, Ehren Mannebach +2 more |
2025-06-24 |
| 12272688 |
Selective growth self-aligned gate endcap (SAGE) architectures without fin end gap |
Leonard P. GULER, Zachary Geiger, Szuya S. Liao |
2025-04-08 |
| 12255234 |
Integrated circuit structures having germanium-based channels |
Siddharth Chouksey, Anand S. Murthy, Harold W. Kennel, Jack T. Kavalieros, Tahir Ghani +2 more |
2025-03-18 |
| 12206027 |
Gate-all-around integrated circuit structures having nanowires with tight vertical spacing |
Anand S. Murthy, Biswajeet Guha, Tahir Ghani, Susmita Ghose, Zachary Geiger |
2025-01-21 |
| 12191349 |
Reducing off-state leakage in semiconductor devices |
Dipanjan Basu, Cory E. Weber, Justin R. Weber, Sean T. Ma, Harold W. Kennel +3 more |
2025-01-07 |