Issued Patents 2023
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11856743 | Flexible merge scheme for source/drain epitaxy regions | Chia-Ta Yu, Cheng-Yu Yang, Sheng-Chen Wang, Sai-Hooi Yeong, Feng-Cheng Yang +1 more | 2023-12-26 |
| 11855182 | Low-k gate spacer and methods for forming the same | Wen-Kai Lin, Bo-Yu Lai, Li Chun Te, Sai-Hooi Yeong, Tien-I Bao +1 more | 2023-12-26 |
| 11855097 | Air gap formation between gate spacer and epitaxy structure | Bo-Yu Lai, Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen | 2023-12-26 |
| 11854907 | Contact air gap formation and structures thereof | Sai-Hooi Yeong | 2023-12-26 |
| 11854868 | Scalable patterning through layer expansion process and resulting structures | Sai-Hooi Yeong, Chi On Chui | 2023-12-26 |
| 11824101 | High aspect ratio gate structure formation | Sai-Hooi Yeong, Chi On Chui, Kuan-Lun Cheng, Chih-Hao Wang | 2023-11-21 |
| 11777004 | Fin field effect transistor (FinFET) device structure and method for forming the same | I-Wen Wu, Chen-Ming Lee, Jian-Hao Chen, Fu-Kai Yang, Feng-Cheng Yang +2 more | 2023-10-03 |
| 11776855 | Fin field effect transistor having airgap and method for manufacturing the same | Sai-Hooi Yeong, Yu-Ming Lin, Chi On Chui | 2023-10-03 |
| 11735641 | FinFET structure with airgap and method of forming the same | Chien Ning Yao, Sai-Hooi Yeong, Wei-Yang Lee, Kuan-Lun Cheng, Chih-Hao Wang | 2023-08-22 |
| 11735471 | Semiconductor structure and method for forming the same | Chia-Ta Yu, Sai-Hooi Yeong, Yen-Chieh Huang, Feng-Cheng Yang | 2023-08-22 |
| 11682675 | Fin field-effect transistor device and method | Sai-Hooi Yeong, Chi On Chui | 2023-06-20 |
| 11610841 | Interconnect structure for semiconductor device and methods of fabrication thereof | Chia-Ta Yu, Yen-Ming Chen, Chi On Chui, Sai-Hooi Yeong | 2023-03-21 |
| 11600520 | Air gaps in memory array structures | Sheng-Chen Wang, Sai-Hooi Yeong, Chia-Ta Yu, Han-Jong Chia | 2023-03-07 |
| 11557517 | Fin field effect transistor having airgap and method for manufacturing the same | Sai-Hooi Yeong, Yu-Ming Lin, Chi On Chui | 2023-01-17 |