Issued Patents 2023
Showing 1–25 of 38 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11856785 | Memory array and methods of forming same | Yu-Ming Lin, Bo-Feng Young, Sai-Hooi Yeong, Chi On Chui | 2023-12-26 |
| 11856780 | Grid structure to reduce domain size in ferroelectric memory device | Sai-Hooi Yeong | 2023-12-26 |
| 11849589 | Semiconductor structure and manufacturing method thereof | Yu-Ming Lin, Zhiqiang Wu, Sai-Hooi Yeong | 2023-12-19 |
| 11849587 | Three-dimensional memory device and manufacturing method thereof | Chao-I Wu, Sai-Hooi Yeong, Yu-Ming Lin | 2023-12-19 |
| 11848381 | Methods of operating multi-bit memory storage device | Meng-Han Lin, Chia-En Huang, Martin Liu, Sai-Hooi Yeong, Yih Wang | 2023-12-19 |
| 11837661 | Sidewall spacer structure to increase switching performance of ferroelectric memory device | — | 2023-12-05 |
| 11832450 | Embedded ferroelectric FinFET memory device | Bo-Feng Young, Chung-Te Lin, Sai-Hooi Yeong, Yu-Ming Lin, Sheng-Chih Lai +1 more | 2023-11-28 |
| 11830550 | Memory with FRAM and SRAM of IC | Sai-Hooi Yeong, Yu-Ming Lin | 2023-11-28 |
| 11805657 | Ferroelectric tunnel junction memory device using a magnesium oxide tunneling dielectric and methods for forming the same | Mauricio Manfrini, Sai-Hooi Yeong, Bo-Feng Young, Chun-Chieh Lu | 2023-10-31 |
| 11805652 | 3D RAM SL/BL contact modulation | Sheng-Chen Wang, Feng-Cheng Yang, Meng-Han Lin | 2023-10-31 |
| 11799030 | Semiconductor devices with embedded ferroelectric field effect transistors | Chia-Hao Chang, Lin-Yu Huang, Bo-Feng Young, Yu-Ming Lin | 2023-10-24 |
| 11776602 | Memory array staircase structure | Meng-Han Lin, Sheng-Chen Wang, Feng-Cheng Yang, Yu-Ming Lin, Chung-Te Lin | 2023-10-03 |
| 11756987 | Ferroelectric tunnel junction devices with discontinuous seed structure and methods for forming the same | Mauricio Manfrini | 2023-09-12 |
| 11758737 | Ferroelectric memory device and method of forming the same | — | 2023-09-12 |
| 11744080 | Three-dimensional memory device with word lines extending through sub-arrays, semiconductor device including the same and method for manufacturing the same | Meng-Han Lin, Yi-Ching Liu, Chia-En Huang, Sheng-Chen Wang, Feng-Cheng Yang +1 more | 2023-08-29 |
| 11729997 | 3D stackable memory and methods of manufacture | Meng-Han Lin, Chih-Yu Chang, Sai-Hooi Yeong, Yu-Ming Lin | 2023-08-15 |
| 11723209 | Three-dimensional memory device and manufacturing method thereof | Meng-Han Lin, Chun-Fu Cheng, Feng-Cheng Yang, Sheng-Chen Wang, Yu-Chien Chiu | 2023-08-08 |
| 11716857 | Semiconductor memory device and manufacturing method thereof | Yu-Chien Chiu, Meng-Han Lin, Chun-Fu Cheng, Chung-Wei Wu, Zhiqiang Wu | 2023-08-01 |
| 11716909 | Magnetic tunnel junction (MTJ) element and its fabrication process | Ya-Ling Lee, Tsann Lin | 2023-08-01 |
| 11690229 | Magnetoresistive stack with seed region and method of manufacturing the same | Jijun Sun, Sanjeev Aggarwal, Jon Slaughter, Renu Whig | 2023-06-27 |
| 11678492 | Memory device, semiconductor device and manufacturing method of the memory device | Meng-Han Lin, Feng-Cheng Yang, Sheng-Chen Wang | 2023-06-13 |
| 11672126 | Three-dimensional memory device and manufacturing method thereof | Chao-I Wu, Sai-Hooi Yeong, Yu-Ming Lin | 2023-06-06 |
| 11647636 | Memory devices | Meng-Han Lin, Mauricio Manfrini | 2023-05-09 |
| 11647634 | Three-dimensional memory device and method | Feng-Cheng Yang, Meng-Han Lin, Sheng-Chen Wang, Chung-Te Lin | 2023-05-09 |
| 11631698 | Three-dimensional memory device with ferroelectric material | Chun-Chieh Lu, Sai-Hooi Yeong, Bo-Feng Young, Yu-Ming Lin, Chi On Chui +1 more | 2023-04-18 |