Issued Patents 2023
Showing 26–38 of 38 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11616080 | Three-dimensional memory device with ferroelectric material | Chao-I Wu, Yu-Ming Lin | 2023-03-28 |
| 11600520 | Air gaps in memory array structures | Sheng-Chen Wang, Kai-Hsuan Lee, Sai-Hooi Yeong, Chia-Ta Yu | 2023-03-07 |
| 11587823 | Three-dimensional memory device and method | Meng-Han Lin, Sheng-Chen Wang, Feng-Cheng Yang, Chung-Te Lin | 2023-02-21 |
| 11581368 | Memory device, integrated circuit device and method | Meng-Han Lin, Sai-Hooi Yeong, Chenchen Jacob Wang, Yu-Ming Lin | 2023-02-14 |
| 11581337 | Three-dimensional memory device and manufacturing method thereof | Sheng-Chen Wang, Meng-Han Lin, Sai-Hooi Yeong, Yu-Ming Lin | 2023-02-14 |
| 11581336 | Semiconductor memory structure and device | Yu-Ming Lin, Chun-Chieh Lu, Bo-Feng Young, Chenchen Jacob Wang, Sai-Hooi Yeong | 2023-02-14 |
| 11581335 | Ferroelectric tunnel junction devices with metal-FE interface layer and methods for forming the same | Mauricio Manfrini | 2023-02-14 |
| 11574929 | 3D ferroelectric memory | Sheng-Chen Wang, Feng-Cheng Yang, Meng-Han Lin, Sai-Hooi Yeong, Yu-Ming Lin | 2023-02-07 |
| 11569250 | Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same | Bo-Feng Young, Mauricio Manfrini, Sai-Hooi Yeong, Yu-Ming Lin | 2023-01-31 |
| 11569264 | 3D RAM SL/BL contact modulation | Sheng-Chen Wang, Feng-Cheng Yang, Meng-Han Lin | 2023-01-31 |
| 11563006 | Semiconductor structure and method for manufacturing thereof | Meng-Han Lin, Sai-Hooi Yeong, Chenchen Jacob Wang, Yu-Ming Lin | 2023-01-24 |
| 11552103 | Three-dimensional stackable ferroelectric random access memory devices and methods of forming | Meng-Han Lin, Bo-Feng Young, Sheng-Chen Wang, Feng-Cheng Yang, Sai-Hooi Yeong +1 more | 2023-01-10 |
| 11545500 | Three-dimensional memory device and method | Bo-Feng Young, Sai-Hooi Yeong, Sheng-Chen Wang, Yu-Ming Lin | 2023-01-03 |