Issued Patents 2021
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11201281 | Method for forming a flat bottom electrode via (BEVA) top surface for memory | Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Sheng-Hung Shih +3 more | 2021-12-14 |
| 11201190 | RRAM memory cell with multiple filaments | Chin-Chieh Yang, Chih-Yang Chang, Wen-Ting Chu | 2021-12-14 |
| 11107982 | RRAM structure | Chieh-Fei Chiu, Wen-Ting Chu, Yong-Shiuan Tsair, Chin-Yu Mei, Po-Hao Tseng | 2021-08-31 |
| 11094744 | Interconnect landing method for RRAM technology | Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Kuo-Chi Tu +1 more | 2021-08-17 |
| 11038108 | Step height mitigation in resistive random access memory structures | Wei-Ming Wang, Chia-Wei Liu, Jen-Sheng Yang, Wen-Ting Chu, Huei-Tzu Wang | 2021-06-15 |
| 11037990 | Method to form memory cells separated by a void-free dielectric structure | Hsia-Wei Chen, Wen-Ting Chu | 2021-06-15 |
| 11037989 | Method to form memory cells separated by a void-free dielectric structure | Hsia-Wei Chen, Wen-Ting Chu | 2021-06-15 |
| 10903274 | Interconnect landing method for RRAM technology | Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Kuo-Chi Tu +1 more | 2021-01-26 |