Issued Patents 2021
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11195840 | Method and structures pertaining to improved ferroelectric random-access memory (FeRAM) | Tzu-Yu Chen, Sheng-Hung Shih, Wen-Ting Chu, Yong-Shiuan Tsair | 2021-12-07 |
| 11189788 | RRAM bottom electrode | Fu-Chen Chang, Wen-Ting Chu | 2021-11-30 |
| 11183503 | Memory cell having top and bottom electrodes defining recesses | Tzu-Yu Chen, Sheng-Hung Shih, Wen-Ting Chu, Chih-Hsiang Chang, Fu-Chen Chang | 2021-11-23 |
| 11094744 | Interconnect landing method for RRAM technology | Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Wen-Ting Chu +1 more | 2021-08-17 |
| 11088203 | 3D RRAM cell structure for reducing forming and set voltages | Te-Hsien Hsieh, Tzu-Yu Chen, Yuan-Tai Tseng | 2021-08-10 |
| 11037941 | Method for forming an integrated circuit and an integrated circuit | Tzu-Yu Chen, Wen-Ting Chu, Yong-Shiuan Tsair | 2021-06-15 |
| 11017852 | Method of forming memory device | Chu-Jie Huang, Sheng-Hung Shih, Nai-Chao Su, Wen-Ting Chu | 2021-05-25 |
| 11011224 | Memory device and method for forming the same | Chu-Jie Huang, Sheng-Hung Shih, Nai-Chao Su, Wen-Ting Chu | 2021-05-18 |
| 11004975 | Semiconductor device and manufacturing method thereof | Jen-Sheng Yang, Sheng-Hung Shih, Tong-Chern Ong, Wen-Ting Chu | 2021-05-11 |
| 10950784 | RRAM with a barrier layer | Fu-Chen Chang, Wen-Ting Chu, Chu-Jie Huang | 2021-03-16 |
| 10930333 | Embedded ferroelectric memory cell | Tzu-Yu Chen, Wen-Ting Chu, Yong-Shiuan Tsair | 2021-02-23 |
| 10903274 | Interconnect landing method for RRAM technology | Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Wen-Ting Chu +1 more | 2021-01-26 |