Issued Patents 2021
Showing 1–6 of 6 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11201281 | Method for forming a flat bottom electrode via (BEVA) top surface for memory | Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Tung-Sheng Hsiao +3 more | 2021-12-14 |
| 11195840 | Method and structures pertaining to improved ferroelectric random-access memory (FeRAM) | Tzu-Yu Chen, Kuo-Chi Tu, Wen-Ting Chu, Yong-Shiuan Tsair | 2021-12-07 |
| 11183503 | Memory cell having top and bottom electrodes defining recesses | Tzu-Yu Chen, Kuo-Chi Tu, Wen-Ting Chu, Chih-Hsiang Chang, Fu-Chen Chang | 2021-11-23 |
| 11017852 | Method of forming memory device | Kuo-Chi Tu, Chu-Jie Huang, Nai-Chao Su, Wen-Ting Chu | 2021-05-25 |
| 11011224 | Memory device and method for forming the same | Kuo-Chi Tu, Chu-Jie Huang, Nai-Chao Su, Wen-Ting Chu | 2021-05-18 |
| 11004975 | Semiconductor device and manufacturing method thereof | Kuo-Chi Tu, Jen-Sheng Yang, Tong-Chern Ong, Wen-Ting Chu | 2021-05-11 |