Issued Patents 2021
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11189525 | Via-first process for connecting a contact and a gate electrode | Chao-Hsun Wang, Kuo-Yi Chao, Wang-Jung Hsueh | 2021-11-30 |
| 11177212 | Contact formation method and related structure | Po-Yu Huang, Shih-Che Lin, Chao-Hsun Wang, Kuo-Yi Chao | 2021-11-16 |
| 11145554 | Method for source/drain contact formation in semiconductor devices | Shao-Ming Koh, Chen-Ming Lee, I-Wen Wu, Fu-Kai Yang, Jia-Heng Wang | 2021-10-12 |
| 11127684 | Low-resistance interconnect structures | Chao-Hsun Wang, Wang-Jung Hsueh, Kuo-Yi Chao, Ru-Gun Liu | 2021-09-21 |
| 11107896 | Vertical interconnect features and methods of forming | Po-Yu Huang, Shih-Che Lin, Chao-Hsun Wang, Kuo-Yi Chao, Feng-Yu Chang +2 more | 2021-08-31 |
| 11062945 | Methods for reducing contact depth variation in semiconductor fabrication | Yun Lee, Chen-Ming Lee, Fu-Kai Yang, Yi-Jyun Huang, Sheng-Hsiung Wang | 2021-07-13 |
| 11037924 | Method for forming source/drain contacts | Shao-Ming Koh, Chen-Ming Lee, Fu-Kai Yang | 2021-06-15 |
| 11018011 | Methods of forming contact features in semiconductor devices | Chen-Hung Tsai, Chen-Ming Lee, Fu-Kai Yang | 2021-05-25 |
| 10957604 | Semiconductor device and method | Shih-Chieh Wu, Pang-Chi Wu, Kuo-Yi Chao, Hsien-Huang Liao, Tung-Heng Hsieh +1 more | 2021-03-23 |
| 10950728 | Fin field effect transistor (FinFET) device structure with isolation layer and method for forming the same | Chung-Huai CHANG, Chao-Hsun Wang, Kuo-Yi Chao | 2021-03-16 |
| 10945916 | Foot spa | — | 2021-03-16 |
| 10943983 | Integrated circuits having protruding interconnect conductors | Chen-Hung Tsai, Chen-Ming Lee, Fu-Kai Yang | 2021-03-09 |
| 10943818 | Semiconductor device and method | Chun-Han Chen, I-Wen Wu, Chen-Ming Lee, Fu-Kai Yang, Chung-Ting Ko +2 more | 2021-03-09 |
| 10930564 | Metal gate structure cutting process | I-Wen Wu, Chen-Ming Lee, Fu-Kai Yang, Chang-Yun Chang, Ching-Feng Fu +1 more | 2021-02-23 |
| 10923573 | Forming metal contacts on metal gates | Chao-Hsun Wang, Yu-Feng Yin, Kuo-Yi Chao, Feng-Yu Chang, Chen-Yuan Kao | 2021-02-16 |