Issued Patents 2019
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522745 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Yu-Jen Wang +2 more | 2019-12-31 |
| 10522741 | Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch process | Yi Yang, Yu-Jen Wang | 2019-12-31 |
| 10522751 | MTJ CD variation by HM trimming | Yi Yang, Jesmin Haq, Yu-Jen Wang | 2019-12-31 |
| 10522749 | Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage | Yu-Jen Wang, Ru-Ying Tong, Vignesh Sundar, Sahil Patel | 2019-12-31 |
| 10522753 | Highly selective ion beam etch hard mask for sub 60nm MRAM devices | Yi Yang, Yu-Jen Wang | 2019-12-31 |
| 10516102 | Multiple spacer assisted physical etching of sub 60nm MRAM devices | Yi Yang, Yu-Jen Wang | 2019-12-24 |
| 10516100 | Silicon oxynitride based encapsulation layer for magnetic tunnel junctions | Vignesh Sundar, Yu-Jen Wang, Sahil Patel, Ru-Ying Tong | 2019-12-24 |
| 10418547 | Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrode | Yi Yang, Yu-Jen Wang | 2019-09-17 |
| 10388862 | Highly selective ion beam etch hard mask for sub 60nm MRAM devices | Yi Yang, Yu-Jen Wang | 2019-08-20 |
| 10359699 | Self-adaptive halogen treatment to improve photoresist pattern and magnetoresistive random access memory (MRAM) device uniformity | Yi Yang, Jesmin Haq, Yu-Jen Wang | 2019-07-23 |
| 10297746 | Post treatment to reduce shunting devices for physical etching process | Yu-Jen Wang, Vignesh Sundar, Sahil Patel | 2019-05-21 |