Issued Patents 2019
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522741 | Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch process | Dongna Shen, Yu-Jen Wang | 2019-12-31 |
| 10522753 | Highly selective ion beam etch hard mask for sub 60nm MRAM devices | Dongna Shen, Yu-Jen Wang | 2019-12-31 |
| 10522751 | MTJ CD variation by HM trimming | Dongna Shen, Jesmin Haq, Yu-Jen Wang | 2019-12-31 |
| 10522750 | Multiply spin-coated ultra-thick hybrid hard mask for sub 60nm MRAM devices | Yu-Jen Wang | 2019-12-31 |
| 10516102 | Multiple spacer assisted physical etching of sub 60nm MRAM devices | Dongna Shen, Yu-Jen Wang | 2019-12-24 |
| 10475991 | Fabrication of large height top metal electrode for sub-60nm magnetoresistive random access memory (MRAM) devices | Zhongjian Teng, Jesmin Haq, Yu-Jen Wang | 2019-11-12 |
| 10446741 | Multiple hard mask patterning to fabricate 20nm and below MRAM devices | Yu-Jen Wang, Jesmin Haq, Tom Zhong | 2019-10-15 |
| 10418547 | Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrode | Dongna Shen, Yu-Jen Wang | 2019-09-17 |
| 10388862 | Highly selective ion beam etch hard mask for sub 60nm MRAM devices | Dongna Shen, Yu-Jen Wang | 2019-08-20 |
| 10359699 | Self-adaptive halogen treatment to improve photoresist pattern and magnetoresistive random access memory (MRAM) device uniformity | Dongna Shen, Jesmin Haq, Yu-Jen Wang | 2019-07-23 |