Issued Patents 2019
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522746 | Dual magnetic tunnel junction devices for magnetic random access memory (MRAM) | Vignesh Sundar, Yu-Jen Wang, Luc Thomas | 2019-12-31 |
| 10522752 | Magnetic layer for magnetic random access memory (MRAM) by moment enhancement | Jodi Mari Iwata, Ru-Ying Tong, Huanlong Liu, Yuan-Jen Lee, Jian Zhu | 2019-12-31 |
| 10522747 | Fully compensated synthetic ferromagnet for spintronics applications | Jian Zhu, Yuan-Jen Lee, Huanlong Liu, Ru-Ying Tong, Po-Kang Wang | 2019-12-31 |
| 10522745 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Ru-Ying Tong, Vignesh Sundar, Dongna Shen, Yu-Jen Wang +2 more | 2019-12-31 |
| 10522744 | High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications | Jodi Mari Iwata, Ru-Ying Tong, Huanlong Liu, Yuan-Jen Lee, Jian Zhu | 2019-12-31 |
| 10509074 | Electrical testing apparatus for spintronics devices | Huanlong Liu, Jian Zhu, Yuan-Jen Lee, Po-Kang Wang | 2019-12-17 |
| 10490733 | Seed layer for multilayer magnetic materials | Ru-Ying Tong | 2019-11-26 |
| 10475564 | Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation | Luc Thomas, Ru-Ying Tong | 2019-11-12 |
| 10439132 | Protective passivation layer for magnetic tunnel junctions | Jodi Mari Iwata, Ru-Ying Tong | 2019-10-08 |
| 10431736 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Luc Thomas, Po-Kang Wang +2 more | 2019-10-01 |
| 10401464 | Scanning ferromagnetic resonance (FMR) for wafer-level characterization of magnetic films and multilayers | Santiago Serrano Guisan, Luc Thomas, Son Le | 2019-09-03 |
| 10325639 | Initialization process for magnetic random access memory (MRAM) production | Yuan-Jen Lee, Huanlong Liu, Jian Zhu | 2019-06-18 |
| 10312433 | Reduction of capping layer resistance area product for magnetic device applications | Ru-Ying Tong | 2019-06-04 |
| 10230044 | Fully compensated synthetic ferromagnet for spintronics applications | Jian Zhu, Yuan-Jen Lee, Huanlong Liu, Ru-Ying Tong, Po-Kang Wang | 2019-03-12 |
| 10193062 | MgO insertion into free layer for magnetic memory applications | Jodi Mari Iwata, Ru-Ying Tong, Po-Kang Wang | 2019-01-29 |
| 10193056 | Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM | Robert Beach, Yu-Jen Wang, Ru-Ying Tong | 2019-01-29 |