RT

Ru-Ying Tong

TSMC: 12 patents #106 of 3,065Top 4%
HT Headway Technologies: 3 patents #10 of 54Top 20%
📍 Los Gatos, CA: #9 of 683 inventorsTop 2%
🗺 California: #600 of 67,890 inventorsTop 1%
Overall (2019): #3,624 of 560,194Top 1%
15
Patents 2019

Issued Patents 2019

Showing 1–15 of 15 patents

Patent #TitleCo-InventorsDate
10522747 Fully compensated synthetic ferromagnet for spintronics applications Jian Zhu, Guenole Jan, Yuan-Jen Lee, Huanlong Liu, Po-Kang Wang 2019-12-31
10522752 Magnetic layer for magnetic random access memory (MRAM) by moment enhancement Guenole Jan, Jodi Mari Iwata, Huanlong Liu, Yuan-Jen Lee, Jian Zhu 2019-12-31
10522749 Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage Dongna Shen, Yu-Jen Wang, Vignesh Sundar, Sahil Patel 2019-12-31
10522745 Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions Sahil Patel, Guenole Jan, Vignesh Sundar, Dongna Shen, Yu-Jen Wang +2 more 2019-12-31
10522744 High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications Guenole Jan, Jodi Mari Iwata, Huanlong Liu, Yuan-Jen Lee, Jian Zhu 2019-12-31
10516100 Silicon oxynitride based encapsulation layer for magnetic tunnel junctions Vignesh Sundar, Yu-Jen Wang, Dongna Shen, Sahil Patel 2019-12-24
10516101 Physical cleaning with in-situ dielectric encapsulation layer for spintronic device application Yu-Jen Wang, Keyu Pi 2019-12-24
10490733 Seed layer for multilayer magnetic materials Guenole Jan 2019-11-26
10475564 Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation Luc Thomas, Guenole Jan 2019-11-12
10439132 Protective passivation layer for magnetic tunnel junctions Jodi Mari Iwata, Guenole Jan 2019-10-08
10431736 Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas +2 more 2019-10-01
10312433 Reduction of capping layer resistance area product for magnetic device applications Guenole Jan 2019-06-04
10230044 Fully compensated synthetic ferromagnet for spintronics applications Jian Zhu, Guenole Jan, Yuan-Jen Lee, Huanlong Liu, Po-Kang Wang 2019-03-12
10193056 Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM Robert Beach, Guenole Jan, Yu-Jen Wang 2019-01-29
10193062 MgO insertion into free layer for magnetic memory applications Jodi Mari Iwata, Guenole Jan, Po-Kang Wang 2019-01-29