Issued Patents 2019
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522752 | Magnetic layer for magnetic random access memory (MRAM) by moment enhancement | Guenole Jan, Jodi Mari Iwata, Ru-Ying Tong, Yuan-Jen Lee, Jian Zhu | 2019-12-31 |
| 10522744 | High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications | Guenole Jan, Jodi Mari Iwata, Ru-Ying Tong, Yuan-Jen Lee, Jian Zhu | 2019-12-31 |
| 10522745 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Dongna Shen +2 more | 2019-12-31 |
| 10522747 | Fully compensated synthetic ferromagnet for spintronics applications | Jian Zhu, Guenole Jan, Yuan-Jen Lee, Ru-Ying Tong, Po-Kang Wang | 2019-12-31 |
| 10509074 | Electrical testing apparatus for spintronics devices | Guenole Jan, Jian Zhu, Yuan-Jen Lee, Po-Kang Wang | 2019-12-17 |
| 10431736 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas, Po-Kang Wang +2 more | 2019-10-01 |
| 10325639 | Initialization process for magnetic random access memory (MRAM) production | Yuan-Jen Lee, Guenole Jan, Jian Zhu | 2019-06-18 |
| 10230044 | Fully compensated synthetic ferromagnet for spintronics applications | Jian Zhu, Guenole Jan, Yuan-Jen Lee, Ru-Ying Tong, Po-Kang Wang | 2019-03-12 |