Issued Patents 2019
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10504717 | Integrated system and method for source/drain engineering | Chun YAN, Melitta Hon, Hua Chung, Schubert S. Chu | 2019-12-10 |
| 10438796 | Method for removing native oxide and residue from a III-V group containing surface | Chun YAN | 2019-10-08 |
| 10332739 | UV radiation system and method for arsenic outgassing control in sub 7nm CMOS fabrication | Chun YAN, Hua Chung, Schubert S. Chu | 2019-06-25 |
| 10276688 | Selective process for source and drain formation | Zhiyuan Ye, Flora Fong-Song CHANG, Abhishek Dube, Xuebin Li, Errol Antonio C. Sanchez +2 more | 2019-04-30 |
| 10269647 | Self-aligned EPI contact flow | Ying Zhang, Schubert S. Chu, Regina Freed, Hua Chung | 2019-04-23 |
| 10256322 | Co-doping process for n-MOS source drain application | Zhiyuan Ye, Hua Chung | 2019-04-09 |
| 10243063 | Method of uniform channel formation | Chun YAN | 2019-03-26 |
| 10236190 | Method for wafer outgassing control | Chun YAN | 2019-03-19 |
| 10224421 | Self-aligned process for sub-10nm fin formation | Zhiyuan Ye, Chun Yan, Hua Chung, Schubert S. Chu, Satheesh Kuppurao | 2019-03-05 |
| 10204781 | Methods for bottom up fin structure formation | Yung-Chen Lin, Qingjun Zhou, Ying Zhang | 2019-02-12 |
| 10205002 | Method of epitaxial growth shape control for CMOS applications | Chun YAN, Errol Antonio C. Sanchez, Hua Chung | 2019-02-12 |