Issued Patents 2019
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10504723 | Method and apparatus for selective epitaxy | Xuebin Li, Flora Fong-Song CHANG, Schubert S. Chu, Abhishek Dube | 2019-12-10 |
| 10504717 | Integrated system and method for source/drain engineering | Chun YAN, Xinyu BAO, Melitta Hon, Schubert S. Chu | 2019-12-10 |
| 10403492 | Integration of materials removal and surface treatment in semiconductor device fabrication | Michael X. Yang, Xinliang Lu, Haochen Li, Ting Xie, Qi Zhang | 2019-09-03 |
| 10354883 | Surface treatment of silicon or silicon germanium surfaces using organic radicals | Michael X. Yang, Xinliang Lu | 2019-07-16 |
| 10332739 | UV radiation system and method for arsenic outgassing control in sub 7nm CMOS fabrication | Chun YAN, Xinyu BAO, Schubert S. Chu | 2019-06-25 |
| 10312096 | Methods for titanium silicide formation using TiCl4 precursor and silicon-containing precursor | Matthias Bauer, Schubert S. Chu, Satheesh Kuppurao | 2019-06-04 |
| 10276688 | Selective process for source and drain formation | Xinyu BAO, Zhiyuan Ye, Flora Fong-Song CHANG, Abhishek Dube, Xuebin Li +2 more | 2019-04-30 |
| 10269647 | Self-aligned EPI contact flow | Ying Zhang, Schubert S. Chu, Xinyu BAO, Regina Freed | 2019-04-23 |
| 10269574 | Surface treatment of carbon containing films using organic radicals | Michael X. Yang, Xinliang Lu | 2019-04-23 |
| 10256322 | Co-doping process for n-MOS source drain application | Xinyu BAO, Zhiyuan Ye | 2019-04-09 |
| 10224421 | Self-aligned process for sub-10nm fin formation | Zhiyuan Ye, Xinyu BAO, Chun Yan, Schubert S. Chu, Satheesh Kuppurao | 2019-03-05 |
| 10205002 | Method of epitaxial growth shape control for CMOS applications | Xinyu BAO, Chun YAN, Errol Antonio C. Sanchez | 2019-02-12 |