| 10504717 |
Integrated system and method for source/drain engineering |
Chun YAN, Melitta Hon, Hua Chung, Schubert S. Chu |
2019-12-10 |
| 10438796 |
Method for removing native oxide and residue from a III-V group containing surface |
Chun YAN |
2019-10-08 |
| 10332739 |
UV radiation system and method for arsenic outgassing control in sub 7nm CMOS fabrication |
Chun YAN, Hua Chung, Schubert S. Chu |
2019-06-25 |
| 10276688 |
Selective process for source and drain formation |
Zhiyuan Ye, Flora Fong-Song CHANG, Abhishek Dube, Xuebin Li, Errol Antonio C. Sanchez +2 more |
2019-04-30 |
| 10269647 |
Self-aligned EPI contact flow |
Ying Zhang, Schubert S. Chu, Regina Freed, Hua Chung |
2019-04-23 |
| 10256322 |
Co-doping process for n-MOS source drain application |
Zhiyuan Ye, Hua Chung |
2019-04-09 |
| 10243063 |
Method of uniform channel formation |
Chun YAN |
2019-03-26 |
| 10236190 |
Method for wafer outgassing control |
Chun YAN |
2019-03-19 |
| 10224421 |
Self-aligned process for sub-10nm fin formation |
Zhiyuan Ye, Chun Yan, Hua Chung, Schubert S. Chu, Satheesh Kuppurao |
2019-03-05 |
| 10204781 |
Methods for bottom up fin structure formation |
Yung-Chen Lin, Qingjun Zhou, Ying Zhang |
2019-02-12 |
| 10205002 |
Method of epitaxial growth shape control for CMOS applications |
Chun YAN, Errol Antonio C. Sanchez, Hua Chung |
2019-02-12 |
