| 10459338 |
Exposure activated chemically amplified directed self-assembly (DSA) for back end of line (BEOL) pattern cutting and plugging |
Eungnak Han, Swaminathan Sivakumar, Ernisse Putna |
2019-10-29 |
| 10338474 |
Underlying absorbing or conducting layer for Ebeam direct write (EBDW) lithography |
Shakul Tandon, Yan Borodovsky, Charles H. Wallace |
2019-07-02 |
| 10325814 |
Patterning of vertical nanowire transistor channel and gate with directed self assembly |
Swaminathan Sivakumar |
2019-06-18 |
| 10319625 |
Metal via processing schemes with via critical dimension (CD) control for back end of line (BEOL) interconnects and the resulting structures |
Mohit K. HARAN, Charles H. Wallace, Robert M. Bigwood, Deepak S. Rao, Alexander F. Kaplan |
2019-06-11 |
| 10297467 |
Self-aligned via and plug patterning for back end of line (BEOL) interconnects |
Charles H. Wallace |
2019-05-21 |
| 10211088 |
Self-aligned isotropic etch of pre-formed vias and plugs for back end of line (BEOL) interconnects |
Charles H. Wallace, Elliot N. Tan, Swaminathan Sivakumar |
2019-02-19 |
| 10204830 |
Previous layer self-aligned via and plug patterning for back end of line (BEOL) interconnects |
Charles H. Wallace, Elliot N. Tan, Swaminathan Sivakumar |
2019-02-12 |