Issued Patents 2019
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10475909 | Electric assembly including a bipolar switching device and a wide bandgap transistor | Thomas Basler, Roman Baburske, Daniel Domes, Johannes Georg Laven | 2019-11-12 |
| 10460895 | Safety switching device for fail-safely disconnecting an electrical load | Jürgen Pullmann, Christoph Zinser, Antonio Spataro, Marco Giger, Hans Schwenkel | 2019-10-29 |
| 10431504 | Method of manufacturing semiconductor devices by bonding a semiconductor disk on a base substrate, composite wafer and semiconductor device | Wolfgang Lehnert, Rudolf Berger, Albert Birner, Helmut Brech, Oliver Häberlen +1 more | 2019-10-01 |
| 10411097 | Semiconductor component having a doped substrate layer and corresponding methods of manufacturing | Hans-Joachim Schulze, Jens Peter Konrath, Christian Hecht | 2019-09-10 |
| 10410911 | Buried insulator regions and methods of formation thereof | Carsten Schaeffer, Andreas Moser, Matthias Kuenle, Matteo Dainese, Hans-Joachim Schulze | 2019-09-10 |
| 10403468 | Energy filter for processing a power semiconductor device | Andre Brockmeier | 2019-09-03 |
| 10396170 | Semiconductor devices and methods for forming semiconductor devices | Hans-Joachim Schulze, Guenther Ruhl | 2019-08-27 |
| 10361192 | Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice | Romain Esteve, Dethard Peters | 2019-07-23 |
| 10347490 | Production of an integrated circuit including electrical contact on SiC | Thomas Gutt, Michael Treu | 2019-07-09 |
| 10319599 | Methods of planarizing SiC surfaces | Hans-Joachim Schulze, Helmut Oefner | 2019-06-11 |
| 10256097 | Forming a metal contact layer on silicon carbide and semiconductor device with metal contact structure | Ravi Keshav Joshi, Romain Esteve, Francisco Javier Santos Rodriguez, Gerald Unegg | 2019-04-09 |
| 10242840 | Energy filter for processing a power semiconductor device | Andre Brockmeier | 2019-03-26 |
| 10217636 | Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions | Thomas Aichinger, Victorina Poenariu, Wolfgang Bergner, Romain Esteve, Daniel Kueck +3 more | 2019-02-26 |
| 10211306 | Semiconductor device with diode region and trench gate structure | Ralf Siemieniec, Dethard Peters, Romain Esteve, Wolfgang Bergner, Thomas Aichinger +4 more | 2019-02-19 |