JL

Johannes Georg Laven

Infineon Technologies Ag: 20 patents #4 of 980Top 1%
IA Infineon Technologies Austria Ag: 1 patents #111 of 283Top 40%
📍 Schweinhub, DE: #2 of 15 inventorsTop 15%
Overall (2019): #1,814 of 560,194Top 1%
21
Patents 2019

Issued Patents 2019

Showing 1–21 of 21 patents

Patent #TitleCo-InventorsDate
10497801 Method of manufacturing a semiconductor device having an undulated profile of net doping in a drift zone Elmar Falck, Andreas Haertl, Manfred Pfaffenlehner, Francisco Javier Santos Rodriguez, Daniel Schloegl +2 more 2019-12-03
10475910 Semiconductor device having an insulated gate bipolar transistor arrangement Hans-Joachim Schulze, Roman Baburske 2019-11-12
10475909 Electric assembly including a bipolar switching device and a wide bandgap transistor Thomas Basler, Roman Baburske, Daniel Domes, Roland Rupp 2019-11-12
10461739 Transistor device Thomas Basler, Roman Baburske, Franz-Josef Niedernostheide, Hans-Joachim Schulze 2019-10-29
10439055 IGBT with dV/dt controllability Alexander Philippou, Christian Jaeger, Antonio Vellei 2019-10-08
10424645 Semiconductor device, method for testing a semiconductor device and method for forming a semiconductor device Alexander Philippou, Erich Griebl, Maria Cotorogea 2019-09-24
10404250 Transistor device Thomas Basler, Roman Baburske, Franz-Josef Niedernostheide, Hans-Joachim Schulze 2019-09-03
10403556 Semiconductor device including a heat sink structure Peter Irsigler, Joachim Mahler, Guenther Ruhl, Hans-Joachim Schulze, Markus Zundel 2019-09-03
10381467 Semiconductor device with separation regions Roman Baburske, Matteo Dainese, Peter Lechner, Hans-Joachim Schulze 2019-08-13
10366895 Methods for forming a semiconductor device using tilted reactive ion beam Anton Mauder, Hans-Joachim Schulze, Werner Schustereder 2019-07-30
10347754 Power semiconductor device with dV/dt controllability through select trench electrode biasing, and method of manufacturing the same Alexander Philippou, Christian Jaeger, Max Christian Seifert, Antonio Vellei 2019-07-09
10340337 Diode structure of a power semiconductor device Roman Baburske, Philip Christoph Brandt 2019-07-02
10333387 Electric assembly including a semiconductor switching device and a clamping diode Thomas Basler, Roman Baburske 2019-06-25
10325809 Methods for splitting semiconductor devices and semiconductor device Hans-Joachim Schulze, Martin FACCINELLI 2019-06-18
10312258 Semiconductor device with buried cavities and dielectric support structures Matteo Dainese, Hans-Joachim Schulze 2019-06-04
10304952 Power semiconductor device with dV/dt controllability and cross-trench arrangement Matteo Dainese, Alexander Philippou, Markus Bina, Ingo Dirnstorfer, Erich Griebl +3 more 2019-05-28
10229990 Semiconductor device having a desaturation channel structure for desaturating a charge carrier concentration in an IGBT cell Hans-Joachim Schulze 2019-03-12
10217837 Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures Roman Baburske, Matteo Dainese, Peter Lechner, Hans-Joachim Schulze 2019-02-26
10211325 Semiconductor device including undulated profile of net doping in a drift zone Elmar Falck, Andreas Haertl, Manfred Pfaffenlehner, Francisco Javier Santos Rodriguez, Daniel Schloegl +2 more 2019-02-19
10200028 Electric assembly including a reverse conducting switching device and a rectifying device Roman Baburske, Thomas Basler 2019-02-05
10192955 Semiconductor device containing oxygen-related thermal donors Moriz Jelinek, Hans-Joachim Schulze, Werner Schustereder, Michael Stadtmueller 2019-01-29