Issued Patents 2017
Showing 1–25 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9847425 | FinFET with a semiconductor strip as a base | Shi Ning Ju, Ching-Wei Tsai, Chih-Hao Wang, Ying-Keung Leung, Carlos H. Diaz | 2017-12-19 |
| 9847332 | Semiconductor device and fabricating the same | Ting-Hung Hsu | 2017-12-19 |
| 9837537 | Semiconductor device and formation thereof | Guan-Lin Chen, Chao-Hsiung Wang, Chi-Wen Liu | 2017-12-05 |
| 9837321 | Nonplanar device and strain-generating channel dielectric | Ka-Hing Fung, Zhiqiang Wu | 2017-12-05 |
| 9818872 | Multi-gate device and method of fabrication thereof | Ching-Wei Tsai, Carlos H. Diaz, Chih-Hao Wang, Wai-Yi Lien, Ying-Keung Leung | 2017-11-14 |
| 9806178 | FinFET structure and method for fabricating the same | Guan-Lin Chen, Chao-Hsiung Wang, Chi-Wen Liu | 2017-10-31 |
| 9773705 | FinFET channel on oxide structures and related methods | Ching-Wei Tsai, Ying-Keung Leung | 2017-09-26 |
| 9773892 | Isolation structure of fin field effect transistor | Guan-Lin Chen, Chao-Hsiung Wang, Chi-Wen Liu | 2017-09-26 |
| 9773786 | FETs and methods of forming FETs | Chi-Wen Liu, Chih-Hao Wang | 2017-09-26 |
| 9761586 | Method and structure for FinFET device | Ka-Hing Fung, Chih-Sheng Chang, Zhiqiang Wu | 2017-09-12 |
| 9761723 | Structure and formation method of finFET device | — | 2017-09-12 |
| 9741821 | Two-step dummy gate formation | Kuan-Ting Pan, Chih-Hao Wang, Ying-Keung Leung, Carlos H. Diaz | 2017-08-22 |
| 9741810 | Strained channel of gate-all-around transistor | Chi-Wen Liu, Chao-Hsiung Wang | 2017-08-22 |
| 9735255 | Method for fabricating a finFET device including a stem region of a fin element | Jean-Pierre Colinge, Zhiqiang Wu | 2017-08-15 |
| 9721955 | Structure and method for SRAM FinFET device having an oxide feature | Ka-Hing Fung, Chih-Sheng Chang, Zhiqiang Wu | 2017-08-01 |
| 9716096 | Semiconductor structure with feature spacer and method for manufacturing the same | Chun-Hsiung Lin, Chih-Hao Wang, Ying-Keung Leung, Carlos H. Diaz | 2017-07-25 |
| 9711533 | FinFET devices having different source/drain proximities for input/output devices and non-input/output devices and the method of fabrication thereof | Ching-Wei Tsai, Chih-Hao Wang, Ying-Keung Leung | 2017-07-18 |
| 9711535 | Method of forming FinFET channel | Chih-Hao Wang, Ching-Wei Tsai, Jhon Jhy Liaw, Wai-Yi Lien | 2017-07-18 |
| 9704883 | FETS and methods of forming FETS | Chih-Hao Wang, Ching-Wei Tsai, Chi-Wen Liu, Jhon Jhy Liaw, Wai-Yi Lien | 2017-07-11 |
| 9704861 | Semiconductor device and fabricating the same | Ting-Hung Hsu | 2017-07-11 |
| 9698058 | Structure and method for FinFET device | Ka-Hing Fung, Chih-Sheng Chang, Zhiqiang Wu | 2017-07-04 |
| 9691621 | Silicide region of gate-all-around transistor | Chi-Wen Liu, Chao-Hsiung Wang | 2017-06-27 |
| 9666581 | FinFET with source/drain structure and method of fabrication thereof | Ching-Wei Tsai, Ying-Keung Leung | 2017-05-30 |
| 9640645 | Semiconductor device with silicide | Jean-Pierre Colinge, Ta-Pen Guo, Carlos H. Diaz | 2017-05-02 |
| 9634091 | Silicon and silicon germanium nanowire formation | Carlos H. Diaz, Jean-Pierre Colinge | 2017-04-25 |