Issued Patents 2017
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9786757 | Method of forming horizontal gate all around structure | Huan-Chieh Su, Jui-Chien Huang, Chun-An Lin, Chien-Hsun Wang | 2017-10-10 |
| 9773868 | Nanowire MOSFET with support structures for source and drain | Chien-Hsun Wang, Mao-Lin Huang, Jean-Pierre Colinge | 2017-09-26 |
| 9754840 | Horizontal gate-all-around device having wrapped-around source and drain | Chung-Cheng Wu, Carlos H. Diaz, Chih-Hao Wang, Wen-Hsing Hsieh, Yi-Ming Sheu | 2017-09-05 |
| 9735261 | Semiconductor device and formation thereof | Mao-Lin Huang, Chien-Hsun Wang, Meng-Ku Chen, Li-Ting Wang, Hung-Ta Lin | 2017-08-15 |
| 9716096 | Semiconductor structure with feature spacer and method for manufacturing the same | Kuo-Cheng Ching, Chih-Hao Wang, Ying-Keung Leung, Carlos H. Diaz | 2017-07-25 |
| 9620618 | Transistor and method for forming the same | Chien-Hsun Wang, Mao-Lin Huang | 2017-04-11 |
| 9564363 | Method of forming butted contact | Chih-Hao Wang, Chia-Hao Chang, Jia-Chuan You, Wei-Hao Wu, Yi-Hsiung Lin +1 more | 2017-02-07 |
| 9543419 | FinFET structures and methods of forming the same | Chun-Hsiang Fan, Yung-Ta Li, Mao-Lin Huang | 2017-01-10 |
| 9536738 | Vertical gate all around (VGAA) devices and methods of manufacturing the same | Yu-Lien Huang, Chi-Wen Liu | 2017-01-03 |
| 9536962 | Source/drain regions for high electron mobility transistors (HEMT) and methods of forming same | Chun-Hsiang Fan, Mao-Lin Huang | 2017-01-03 |