YL

Ying-Keung Leung

TSMC: 9 patents #193 of 2,832Top 7%
GP Globalfoundries Singapore Pte.: 2 patents #33 of 178Top 20%
Overall (2017): #5,323 of 506,227Top 2%
11
Patents 2017

Issued Patents 2017

Showing 1–11 of 11 patents

Patent #TitleCo-InventorsDate
9847425 FinFET with a semiconductor strip as a base Kuo-Cheng Ching, Shi Ning Ju, Ching-Wei Tsai, Chih-Hao Wang, Carlos H. Diaz 2017-12-19
9818872 Multi-gate device and method of fabrication thereof Kuo-Cheng Ching, Ching-Wei Tsai, Carlos H. Diaz, Chih-Hao Wang, Wai-Yi Lien 2017-11-14
9818867 Simple and cost-free MTP structure Shyue Seng Tan, Yuan-Chen Sun, Eng Huat Toh, Kiok Boone Elgin Quek 2017-11-14
9773705 FinFET channel on oxide structures and related methods Kuo-Cheng Ching, Ching-Wei Tsai 2017-09-26
9741821 Two-step dummy gate formation Kuo-Cheng Ching, Kuan-Ting Pan, Chih-Hao Wang, Carlos H. Diaz 2017-08-22
9716096 Semiconductor structure with feature spacer and method for manufacturing the same Kuo-Cheng Ching, Chun-Hsiung Lin, Chih-Hao Wang, Carlos H. Diaz 2017-07-25
9711533 FinFET devices having different source/drain proximities for input/output devices and non-input/output devices and the method of fabrication thereof Kuo-Cheng Ching, Ching-Wei Tsai, Chih-Hao Wang 2017-07-18
9666581 FinFET with source/drain structure and method of fabrication thereof Kuo-Cheng Ching, Ching-Wei Tsai 2017-05-30
9614027 High voltage transistor with reduced isolation breakdown Shyue Seng Tan 2017-04-04
9608116 FINFETs with wrap-around silicide and method forming the same Kuo-Cheng Ching, Ching-Wei Tsai, Chi-Wen Liu, Chih-Hao Wang 2017-03-28
9559184 Devices including gate spacer with gap or void and methods of forming the same Kuo-Cheng Ching, Ching-Wei Tsai, Chi-Wen Liu 2017-01-31