| 9831421 |
Magnetic memory element with composite fixed layer |
Zihui Wang, Huadong Gan, Yiming Huai, Yuchen Zhou, Bing K. Yen +1 more |
2017-11-28 |
| 9704955 |
Nanotube semiconductor devices |
Hamza Yilmaz, Anup Bhalla, John Chen, Hong Chang |
2017-07-11 |
| 9704948 |
Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof |
Yongping Ding, Hamza Yilmaz, Madhur Bobde |
2017-07-11 |
| 9647032 |
Spin-orbitronics device and applications thereof |
Parviz Keshtbod, Kimihiro Satoh, Zihui Wang, Huadong Gan |
2017-05-09 |
| 9647202 |
Magnetic random access memory with perpendicular enhancement layer |
Huadong Gan, Yuchen Zhou, Yiming Huai, Zihui Wang |
2017-05-09 |
| 9627526 |
Assymetric poly gate for optimum termination design in trench power MOSFETs |
Yeeheng Lee, Yongping Ding |
2017-04-18 |
| 9586570 |
Methods and system for verifying a brake system in a vehicle |
Kimberly Richey |
2017-03-07 |
| 9570404 |
Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC application |
Ji Hwan Pang, Daniel Ng, Anup Bhalla |
2017-02-14 |
| 9559144 |
Magnetic random access memory element having tantalum perpendicular enhancement layer |
Huadong Gan, Yiming Huai, Yuchen Zhou, Zihui Wang, Bing K. Yen |
2017-01-31 |
| 9548334 |
Magnetic tunnel junction with perpendicular enhancement layer and thin reference layer |
Huadong Gan, Yuchen Zhou, Yiming Huai, Zihui Wang |
2017-01-17 |
| 9548074 |
Perpendicular magnetic recording media with magnetic anisotropy gradient and local exchange coupling |
Shaoping Li, Kaizhong Gao, Lei Wang, Wenzhong Zhu |
2017-01-17 |
| 9543506 |
Magnetic random access memory with tri-layer reference layer |
Huadong Gan, Yiming Huai, Yuchen Zhou, Zihui Wang, Bing K. Yen +1 more |
2017-01-10 |