Issued Patents 2017
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9831421 | Magnetic memory element with composite fixed layer | Zihui Wang, Huadong Gan, Yuchen Zhou, Xiaobin Wang, Bing K. Yen +1 more | 2017-11-28 |
| 9793319 | Multilayered seed structure for perpendicular MTJ memory element | Huadong Gan, Bing K. Yen, Roger Klas Malmhall, Yuchen Zhou | 2017-10-17 |
| 9793318 | Landing pad in peripheral circuit for magnetic random access memory (MRAM) | Kimihiro Satoh | 2017-10-17 |
| 9793003 | Programming of non-volatile memory subjected to high temperature exposure | Ebrahim Abedifard, Uday Chandrasekhar, Rajiv Yadav Ranjan | 2017-10-17 |
| 9780300 | Magnetic memory element with composite perpendicular enhancement layer | Yuchen Zhou, Bing K. Yen, Huadong Gan | 2017-10-03 |
| 9748471 | Perpendicular magnetic memory element having magnesium oxide cap layer | Yuchen Zhou, Zihui Wang, Huadong Gan | 2017-08-29 |
| 9679625 | Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer | Jing Zhang, Rajiv Yadav Ranjan, Yuchen Zhou, Zihui Wang, Xiaojie Hao | 2017-06-13 |
| 9647202 | Magnetic random access memory with perpendicular enhancement layer | Huadong Gan, Yuchen Zhou, Zihui Wang, Xiaobin Wang | 2017-05-09 |
| 9634244 | Magnetic random access memory with perpendicular interfacial anisotropy | Huadong Gan, Zihui Wang, Yuchen Zhou | 2017-04-25 |
| 9608038 | Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer | Zihui Wang, Yuchen Zhou, Huadong Gan | 2017-03-28 |
| 9559144 | Magnetic random access memory element having tantalum perpendicular enhancement layer | Huadong Gan, Yuchen Zhou, Zihui Wang, Xiaobin Wang, Bing K. Yen | 2017-01-31 |
| 9548448 | Memory device with increased separation between memory elements | Kimihiro Satoh, Bing K. Yen, Dong Ha Jung | 2017-01-17 |
| 9548334 | Magnetic tunnel junction with perpendicular enhancement layer and thin reference layer | Huadong Gan, Yuchen Zhou, Zihui Wang, Xiaobin Wang | 2017-01-17 |
| 9543506 | Magnetic random access memory with tri-layer reference layer | Huadong Gan, Yuchen Zhou, Zihui Wang, Xiaobin Wang, Bing K. Yen +1 more | 2017-01-10 |