| 9831421 |
Magnetic memory element with composite fixed layer |
Huadong Gan, Yiming Huai, Yuchen Zhou, Xiaobin Wang, Bing K. Yen +1 more |
2017-11-28 |
| 9748471 |
Perpendicular magnetic memory element having magnesium oxide cap layer |
Yuchen Zhou, Huadong Gan, Yiming Huai |
2017-08-29 |
| 9679625 |
Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer |
Jing Zhang, Yiming Huai, Rajiv Yadav Ranjan, Yuchen Zhou, Xiaojie Hao |
2017-06-13 |
| 9647032 |
Spin-orbitronics device and applications thereof |
Xiaobin Wang, Parviz Keshtbod, Kimihiro Satoh, Huadong Gan |
2017-05-09 |
| 9647202 |
Magnetic random access memory with perpendicular enhancement layer |
Huadong Gan, Yuchen Zhou, Yiming Huai, Xiaobin Wang |
2017-05-09 |
| 9634244 |
Magnetic random access memory with perpendicular interfacial anisotropy |
Huadong Gan, Yiming Huai, Yuchen Zhou |
2017-04-25 |
| 9608038 |
Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer |
Yuchen Zhou, Huadong Gan, Yiming Huai |
2017-03-28 |
| 9559144 |
Magnetic random access memory element having tantalum perpendicular enhancement layer |
Huadong Gan, Yiming Huai, Yuchen Zhou, Xiaobin Wang, Bing K. Yen |
2017-01-31 |
| 9548334 |
Magnetic tunnel junction with perpendicular enhancement layer and thin reference layer |
Huadong Gan, Yuchen Zhou, Yiming Huai, Xiaobin Wang |
2017-01-17 |
| 9543506 |
Magnetic random access memory with tri-layer reference layer |
Huadong Gan, Yiming Huai, Yuchen Zhou, Xiaobin Wang, Bing K. Yen +1 more |
2017-01-10 |