| 9818829 |
Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs |
Yeeheng Lee, Sik Lui, Jongoh Kim, Hong Chang, Lingpeng Guan +1 more |
2017-11-14 |
$4,258,000 |
| 9793346 |
Semiconductor device with threshold MOSFET for high voltage termination |
Hamza Yilmaz |
2017-10-17 |
$880,000 |
| 9793256 |
Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS) |
— |
2017-10-17 |
$880,000 |
| 9793254 |
TVS structures for high surge and low capacitance |
Wenjiang Zeng, Limin Weng |
2017-10-17 |
$880,000 |
| 9755052 |
Process method and structure for high voltage MOSFETS |
Yongping Ding, Sik Lui, Lei Zhang, Jongoh Kim, John Chen |
2017-09-05 |
$1,975,000 |
| 9748346 |
Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter |
Shekar Mallikarjunaswamy |
2017-08-29 |
$1,998,000 |
| 9748375 |
Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact |
Hamza Yilmaz, Daniel Ng, Daniel Calafut, Anup Bhalla, Ji Pan +2 more |
2017-08-29 |
$1,998,000 |
| 9741808 |
Split-gate trench power MOSFET with protected shield oxide |
Yeeheng Lee, Lingpeng Guan, Hongyong Xue, Yiming Gu, Yang Xiang +6 more |
2017-08-22 |
|
| 9722073 |
Lateral super-junction MOSFET device and termination structure |
Lingpeng Guan, Karthik Padmanabhan, Hamza Yilmaz |
2017-08-01 |
$2,449,000 |
| 9716166 |
Transistor structure with improved unclamped inductive switching immunity |
Wenjie Zhang, Qufei Chen, Kyle Terrill |
2017-07-25 |
$10,157,000 |
| 9704948 |
Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof |
Yongping Ding, Hamza Yilmaz, Xiaobin Wang |
2017-07-11 |
|
| 9685523 |
Diode structures with controlled injection efficiency for fast switching |
Harsh Naik, Lingpeng Guan, Anup Bhalla, Sik Lui |
2017-06-20 |
$1,009,000 |
| 9673289 |
Dual oxide trench gate power MOSFET using oxide filled trench |
Daniel Calafut, Yeeheng Lee, Hong Chang |
2017-06-06 |
$5,791,000 |
| 9666666 |
Dual-gate trench IGBT with buried floating P-type shield |
Jun Hu, Hamza Yilmaz |
2017-05-30 |
$5,440,000 |
| 9647059 |
Manufacturing methods for accurately aligned and self-balanced superjunction devices |
Lingping Guan, Anup Bhalla, Yeeheng Lee, John Chen, Moses Ho |
2017-05-09 |
$2,761,000 |
| 9620584 |
Integrated Schottky diode in high voltage semiconductor device |
Lingpeng Guan, Anup Bhalla, TingGang Zhu |
2017-04-11 |
$1,058,000 |
| 9620630 |
Injection control in semiconductor power devices |
Jun Hu, Lingpeng Guan, Hamza Yilmaz, Lei Zhang, Jongoh Kim |
2017-04-11 |
$1,058,000 |
| 9620614 |
Sawtooth electric field drift region structure for power semiconductor devices |
— |
2017-04-11 |
$1,058,000 |
| 9595609 |
Semiconductor device including superjunction structure formed using angled implant process |
Karthik Padmanabhan, Lingpeng Guan, Lei Zhang, Hamza Yilmaz |
2017-03-14 |
$1,552,000 |
| 9595587 |
Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs |
Yeeheng Lee, Sik Lui, Jongoh Kim, Hong Chang, Lingpeng Guan +1 more |
2017-03-14 |
$1,552,000 |
| 9583586 |
Transient voltage suppressor (TVS) with reduced breakdown voltage |
Ning Shi, Lingpeng Guan |
2017-02-28 |
$4,820,000 |
| 9548352 |
Semiconductor device with field threshold MOSFET for high voltage termination |
Hamza Yilmaz |
2017-01-17 |
$2,905,000 |