Issued Patents 2017
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9818829 | Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs | Yeeheng Lee, Sik Lui, Jongoh Kim, Hong Chang, Lingpeng Guan +1 more | 2017-11-14 |
| 9793346 | Semiconductor device with threshold MOSFET for high voltage termination | Hamza Yilmaz | 2017-10-17 |
| 9793256 | Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS) | — | 2017-10-17 |
| 9793254 | TVS structures for high surge and low capacitance | Wenjiang Zeng, Limin Weng | 2017-10-17 |
| 9755052 | Process method and structure for high voltage MOSFETS | Yongping Ding, Sik Lui, Lei Zhang, Jongoh Kim, John Chen | 2017-09-05 |
| 9748346 | Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter | Shekar Mallikarjunaswamy | 2017-08-29 |
| 9748375 | Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact | Hamza Yilmaz, Daniel Ng, Daniel Calafut, Anup Bhalla, Ji Pan +2 more | 2017-08-29 |
| 9741808 | Split-gate trench power MOSFET with protected shield oxide | Yeeheng Lee, Lingpeng Guan, Hongyong Xue, Yiming Gu, Yang Xiang +6 more | 2017-08-22 |
| 9722073 | Lateral super-junction MOSFET device and termination structure | Lingpeng Guan, Karthik Padmanabhan, Hamza Yilmaz | 2017-08-01 |
| 9716166 | Transistor structure with improved unclamped inductive switching immunity | Wenjie Zhang, Qufei Chen, Kyle Terrill | 2017-07-25 |
| 9704948 | Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof | Yongping Ding, Hamza Yilmaz, Xiaobin Wang | 2017-07-11 |
| 9685523 | Diode structures with controlled injection efficiency for fast switching | Harsh Naik, Lingpeng Guan, Anup Bhalla, Sik Lui | 2017-06-20 |
| 9673289 | Dual oxide trench gate power MOSFET using oxide filled trench | Daniel Calafut, Yeeheng Lee, Hong Chang | 2017-06-06 |
| 9666666 | Dual-gate trench IGBT with buried floating P-type shield | Jun Hu, Hamza Yilmaz | 2017-05-30 |
| 9647059 | Manufacturing methods for accurately aligned and self-balanced superjunction devices | Lingping Guan, Anup Bhalla, Yeeheng Lee, John Chen, Moses Ho | 2017-05-09 |
| 9620584 | Integrated Schottky diode in high voltage semiconductor device | Lingpeng Guan, Anup Bhalla, TingGang Zhu | 2017-04-11 |
| 9620630 | Injection control in semiconductor power devices | Jun Hu, Lingpeng Guan, Hamza Yilmaz, Lei Zhang, Jongoh Kim | 2017-04-11 |
| 9620614 | Sawtooth electric field drift region structure for power semiconductor devices | — | 2017-04-11 |
| 9595609 | Semiconductor device including superjunction structure formed using angled implant process | Karthik Padmanabhan, Lingpeng Guan, Lei Zhang, Hamza Yilmaz | 2017-03-14 |
| 9595587 | Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs | Yeeheng Lee, Sik Lui, Jongoh Kim, Hong Chang, Lingpeng Guan +1 more | 2017-03-14 |
| 9583586 | Transient voltage suppressor (TVS) with reduced breakdown voltage | Ning Shi, Lingpeng Guan | 2017-02-28 |
| 9548352 | Semiconductor device with field threshold MOSFET for high voltage termination | Hamza Yilmaz | 2017-01-17 |